Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Vishal Ganesan"'
Autor:
Prantik Mahajan, Vishal Ganesan, Nandha Kumar Subramani, Ruchil Jain, Souvick Mitra, Robert Gauthier
Publikováno v:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e718cfb897e6e2ebc336910aaf6a04
https://doi.org/10.1109/ipfa55383.2022.9915731
https://doi.org/10.1109/ipfa55383.2022.9915731
Publikováno v:
IRPS
An effective design for medium voltage ESD nMOS power clamp with layout modification of the source junction in 28nm high voltage CMOS technology is presented. Modification of N+/P+ source segmented design of ESD nMOS shows the most efficient ESD powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1dbcd3814971ed5f8c7eb2be5d8a90
https://doi.org/10.1109/irps46558.2021.9405206
https://doi.org/10.1109/irps46558.2021.9405206
Autor:
Vishal Ganesan, Tom Herrmann, Sagar P Karalkar, Kyongjin Hwang, Bhoopendra Singh, Sevashanmugam Marimuthu, Robert Gauthier, Alban Zaka
Publikováno v:
IRPS
An effective design for self-protection medium voltage nMOS with modification of drain junction in 28nm high voltage CMOS technology is presented. Pull down nMOS of the output driver is the main electrostatic discharge path. Design of Source/Drain ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bffd0b13d89fdb179c1443b8cf42e25
https://doi.org/10.1109/irps45951.2020.9129515
https://doi.org/10.1109/irps45951.2020.9129515
Publikováno v:
Review of Scientific Instruments. 89:043704
We report quantitative measurements of nanoscale permittivity and conductivity using tuning-fork (TF) based microwave impedance microscopy (MIM). The system is operated under the driving amplitude modulation mode, which ensures satisfactory feedback
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2e27a56af295430fe302c8a633d5a6e
https://doi.org/10.1063/1.5022997
https://doi.org/10.1063/1.5022997