Effects of trapped charges on Hg-Schottky capacitance-voltage measurements of n-type epitaxial silicon wafers.

Autor: Wang, Q., Liu, D., Virgo, J. T., Yeh, J., Hillard, R. J.

Publikováno v: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 2000, Vol. 18 Issue 4, p1308-1312, 5p