Nanocrystal memories for FLASH device applications

Autor: D. Corso, Cosimo Gerardi, Isodiana Crupi, Marco Bileci, B. DeSalvo, V. Ancarani, Luca Perniola, G. Ammendola, Salvatore Lombardo, Virginia Triolo

Publikováno v: Solid-state electronics 48 (2004): 1483–1488. doi:10.1016/j.sse.2004.03.012
info:cnr-pdr/source/autori:Ammendola, G.; Ancarani, V.; Triolo, V.; Bileci, M.; Corso, D.; Crupi, I.; Perniola, L.; Gerardi, C.; Lombardo, S.; DeSalvo, B./titolo:Nanocrystal memories for FLASH device applications/doi:10.1016%2Fj.sse.2004.03.012/rivista:Solid-state electronics/anno:2004/pagina_da:1483/pagina_a:1488/intervallo_pagine:1483–1488/volume:48

Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conven

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5832d5118100f5419a70c724383366c5
http://www.cnr.it/prodotto/i/35717