Zobrazeno 1 - 10 of 27 pro vyhledávání: '"Vipindas Pala"'
1
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
Autor: Masataka Higashiwaki, Hiroshi Kawarada, Vipindas Pala, T. Paul Chow, Ichiro Omura
Publikováno v: IEEE Transactions on Electron Devices. 64:856-873
We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated ma
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a6a48acccb41b407e4cb274efd25485
https://doi.org/10.1109/ted.2017.2653759
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2
Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems
Autor: Edward Van Brunt, Brett Hull, Scott Allen, John W. Palmour, Vipindas Pala
Publikováno v: Materials Science Forum. 858:970-973
Due to their low switching energies, knee-less forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage topologies. This paper demonstrates how
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c54b1812db71db047a6dd9d8617d8f6f
https://doi.org/10.4028/www.scientific.net/msf.858.970
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3
High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation
Autor: Brett Hull, Scott Allen, John W. Palmour, Vipindas Pala, Daniel J. Lichtenwalner
Publikováno v: Materials Science Forum. 858:671-676
Alkaline earth elements Sr and Ba provide SiO2/SiC interface conditions suitable for obtaining high channel mobility metal-oxide-semiconductor field-effect-transistors (MOSFETs) on the Si-face (0001) of 4H-SiC, without the standard nitric oxide (NO)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aacf8318c5f8a0bdb22ec8349342a9f5
https://doi.org/10.4028/www.scientific.net/msf.858.671
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4
Performance and Reliability of SiC Power MOSFETs
Autor: Vipindas Pala, Daniel J. Lichtenwalner, Brett Hull, A. Burk, Joe Sumakeris, Edward Van Brunt, S.T. Allen, Sei-Hyung Ryu, Michael J. O'Loughlin, John W. Palmour
Publikováno v: MRS Advances. 1:81-89
Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and wi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2bbc3960387bf62b3d8e55f9fa295c55
https://doi.org/10.1557/adv.2015.57
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5
Next-Generation Planar SiC MOSFETs from 900 V to 15 kV
Autor: M. O’Loughlin, Scott Allen, Vipindas Pala, Jim Richmond, Brett Hull, Al Burk, Sei-Hyung Ryu, Lin Cheng, John W. Palmour, Edward VanBrunt
Publikováno v: Materials Science Forum. :701-704
A family of planar MOSFETs with voltage ratings from 900 V to 15 kV are demonstrated. This family of planar MOSFETs represents Cree’s next generation MOSFET design and process, in which we continue to refine and evolve device design and processing
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::34f7a1aafc79482c5e9ed74916c27ea7
https://doi.org/10.4028/www.scientific.net/msf.821-823.701
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6
27 kV, 20 A 4H-SiC n-IGBTs
Autor: Vipindas Pala, Charles W. Tipton, John W. Palmour, Jim Richmond, Edward Van Brunt, Charles Scozzie, Lin Cheng, Michael J. O'Loughlin
Publikováno v: Materials Science Forum. :847-850
In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages exceeding 24 kV were achieved by utilizing thick (210 μm and 230 μm), lightly doped N-drift layers with an appropriate edge termination. Prior to the devic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cfb283a54eebeaa868d116c9a30baa60
https://doi.org/10.4028/www.scientific.net/msf.821-823.847
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9
Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings
Autor: Alex Q. Huang, Scott Allen, Michael J. O'Loughlin, Vipindas Pala, Gangyao Wang, John W. Palmour, Edward Van Brunt, Charles Scozzie, Albert A. Burk, Woongje Sung, Anant K. Agarwal, David Grider, Lin Cheng
Publikováno v: Materials Science Forum. :1089-1095
Advanced high-voltage (≥10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems suc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c50709d0f9ea0d5883a02f7274e0e31
https://doi.org/10.4028/www.scientific.net/msf.778-780.1089
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10
Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes
Autor: Vipindas Pala, Sei-Hyung Ryu, Brett Hull, E. Van Brunt, Allen R. Hefner, John W. Palmour, S.T. Allen
Publikováno v: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper details the device physics of Silicon Carbide MOSFETs in third quadrant operation. It is observed that the gate bias has a large effect on controlling the injection efficiency at the anode of the body diode. The change in threshold voltage
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2bfcf75ba7472bb87815a222993885a9
https://doi.org/10.1109/ispsd.2016.7520819
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