Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Vinuesa Sanz, Guillermo"'
Autor:
Vinuesa Sanz, Guillermo, García García, Héctor, Lendínez Sánchez, José Miguel, García Ochoa, Eduardo, González, M. B., Maldonado, D, Aguilera Pedregosa, C, Moreno, E, Jiménez Molinos, Francisco, Roldán, J.B., Campabadal Segura, Francesca, Castán Lanaspa, María Helena, Dueñas Carazo, Salvador
Producción Científica
In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle vari
In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f292384685b5d46b753300c42183f09
https://doi.org/10.1016/j.mee.2023.112008
https://doi.org/10.1016/j.mee.2023.112008
Autor:
García García, Héctor, Jiménez Molinos, Francisco, Vinuesa Sanz, Guillermo, Bargalló González, Mireia, Roldán, Juan B., Miranda, Enrique, Campabadal Segura, Francesca, Castán Lanaspa, María Helena, Dueñas Carazo, Salvador
Publikováno v:
Solid-State Electronics. 194:108385
Producción Científica
In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capaci
In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd5e5aff1f144cd310e9a51955027470
https://doi.org/10.1016/j.sse.2022.108385
https://doi.org/10.1016/j.sse.2022.108385
Autor:
González Ossorio, Óscar, Poblador Cester, Samuel, Vinuesa Sanz, Guillermo, Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, Maestro Izquierdo, Marcos, Bargalló González, Mireia, Campabadal Segura, Francesca
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica Three topologies of TiN/Ti/HfO 2 /W resistive switching memories (RRAM) are proposed in this work: crossbar, isolated and isolated-crossbar configurations. All configurations use the same sequence of technological processes. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::69d64be45f133cb1a00c0e5688c71048
https://doi.org/10.1109/LAEDC49063.2020.9073596
https://doi.org/10.1109/LAEDC49063.2020.9073596
Autor:
Vinuesa Sanz, Guillermo
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
Consejo Superior de Investigaciones Científicas (CSIC)
Consejo Superior de Investigaciones Científicas (CSIC)
First-principles calculations were conducted for charged iron-nickel nanoalloys to study their structural and electronic properties. These can help in determining their reactivity and stability, to asses if they are good candidates as catalysts for s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e5b81d80532356c6b05925b8aa8c136f
http://uvadoc.uva.es/handle/10324/38473
http://uvadoc.uva.es/handle/10324/38473
Autor:
Vinuesa Sanz, Guillermo
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
En el trabajo se presentan cálculos de primeros principios de clusters neutros de nanoaleaciones de Hierro-Níquel compuestos por 13 átomos, realizados mediante la teoría funcional de la densidad (DFT), en la aproximación de gradientes generaliza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::85becffbfaea64d01f5f5c7198142833