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Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).
In this work, we report the application of graphene field effect transistors (GFETs) as a gamma radiation sensor. The GFETs were irradiated at room temperature by 60Co gamma radiation source for 10 kGy and 20 kGy gamma dose. The Electrical measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d9694f9d05086e814a161ea3f0aa3a7
https://doi.org/10.1109/nmdc.2018.8605850
https://doi.org/10.1109/nmdc.2018.8605850
