Zobrazeno 1 - 10
of 400
pro vyhledávání: '"Vines, Lasse"'
Autor:
Hansen, Ethan R., Niaouris, Vasileios, Matthews, Bethany E., Zimmermann, Christian, Wang, Xingyi, Kolodka, Roman, Vines, Lasse, Spurgeon, Steven R., Fu, Kai-Mei C.
The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically
Externí odkaz:
http://arxiv.org/abs/2310.05806
Autor:
Azarov, Alexander, Fernández, Javier García, Zhao, Junlei, Djurabekova, Flyura, He, Huan, He, Ru, Prytz, Øystein, Vines, Lasse, Bektas, Umutcan, Chekhonin, Paul, Klingner, Nico, Hlawacek, Gregor, Kuznetsov, Andrej
Publikováno v:
Nature Communications 14, 4855 (2023)
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very hi
Externí odkaz:
http://arxiv.org/abs/2303.13114
Autor:
Wang, Xingyi, Zimmermann, Christian, Titze, Michael, Niaouris, Vasileios, Hansen, Ethan R., D'Ambrosia, Samuel H., Vines, Lasse, Bielejec, Edward S., Fu, Kai-Mei C.
Publikováno v:
PhysRevApplied. Vol. 19, Iss. 5, 054090, 2023
Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and
Externí odkaz:
http://arxiv.org/abs/2212.05230
Autor:
Lemva Ousdal, Erlend, Etzelmüller Bathen, Marianne, Galeckas, Augustinas, Kuznetsov, Andrej, Vines, Lasse
Publikováno v:
Journal of Applied Physics; 6/14/2024, Vol. 135 Issue 22, p1-9, 9p
Autor:
Hebnes, Oliver Lerstøl, Bathen, Marianne Etzelmüller, Schøyen, Øyvind Sigmundson, Larsen, Sebastian G. Winther, Vines, Lasse, Hjorth-Jensen, Morten
Semiconductor materials provide a compelling platform for quantum technologies (QT), and the properties of a vast amount of materials can be found in databases containing information from both experimental and theoretical explorations. However, searc
Externí odkaz:
http://arxiv.org/abs/2203.16203
Autor:
Bathen, Marianne Etzelmüller, Kumar, Piyush, Ghezellou, Misagh, Belanche, Manuel, Vines, Lasse, Ul-Hassan, Jawad, Grossner, Ulrike
Publikováno v:
In Materials Science in Semiconductor Processing July 2024 177
Autor:
Bathen, Marianne Etzelmüller, Karsthof, Robert, Galeckas, Augustinas, Kumar, Piyush, Kuznetsov, Andrej Yu., Grossner, Ulrike, Vines, Lasse
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2024 176
Autor:
Assar, Alireza, Martinho, Filipe, Larsen, Jes, Saini, Nishant, Shearer, Denver, Moro, Marcos V., Stulen, Fredrik, Grini, Sigbjørn, Engberg, Sara, Stamate, Eugen, Schou, Jørgen, Vines, Lasse, Canulescu, Stela, Platzer-Björkman, Charlotte, Hansen, Ole
Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell arch
Externí odkaz:
http://arxiv.org/abs/2111.02980
Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signature
Externí odkaz:
http://arxiv.org/abs/2111.01011
Publikováno v:
Journal of Applied Physics; 5/21/2024, Vol. 135 Issue 19, p1-19, 19p