Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Vincenzo Cantarella"'
Autor:
Fabio Principato, Giuseppe Allegra, Corrado Cappello, Olivier Crepel, Nicola Nicosia, Salvatore D′Arrigo, Vincenzo Cantarella, Alessandro Di Mauro, Leonardo Abbene, Marcello Mirabello, Francesco Pintacuda
Publikováno v:
Sensors, Vol 21, Iss 16, p 5627 (2021)
High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK
Externí odkaz:
https://doaj.org/article/d75b44dcd93c44b88ed42af48a3d7339
Autor:
Nicola Nicosia, O. Crepel, Vincenzo Cantarella, Salvatore D′Arrigo, Corrado Cappello, Fabio Principato, Francesco Pintacuda, Marcello Mirabello, Leonardo Abbene, Giuseppe Allegra, Alessandro Di Mauro
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 21, Iss 5627, p 5627 (2021)
Sensors
Volume 21
Issue 16
Sensors, Vol 21, Iss 5627, p 5627 (2021)
Sensors
Volume 21
Issue 16
High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f0037fc5da6b876e4ac64c39109980e
https://doi.org/10.3390/s21165627
https://doi.org/10.3390/s21165627
Publikováno v:
2019 European Space Power Conference (ESPC).
This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications. It's based on prototyping and manufacturing elementary structures that have been s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0113e22ae2caa64faed513c87cf30016
https://doi.org/10.1109/espc.2019.8931985
https://doi.org/10.1109/espc.2019.8931985
Publikováno v:
2019 European Space Power Conference (ESPC).
This paper report the Failure Analysis results performed on SiC Mosfet with SEGR and PIGS failure after SEE test. The analysis discovered a hot spot in the SiC junction at the SEGR fail point.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::731e09a76fe84f990da8befa3110b862
https://doi.org/10.1109/espc.2019.8931999
https://doi.org/10.1109/espc.2019.8931999
Publikováno v:
2019 European Space Power Conference (ESPC).
This paper describes the results about TID test related to 400A and 600A SiC PowerMosfet structures, focused on devices previously annealed at 175°C/200°C. The aim of this report is to evaluate if pre-temperature stress produce reduction on Vth dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e4659a36335bd0a538e9a672d876e3
https://doi.org/10.1109/espc.2019.8931990
https://doi.org/10.1109/espc.2019.8931990
Conference
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