Controlling transition metal atomic ordering in two-dimensional Mo1- xW xS2alloys

Autor: Jeff J P M Schulpen, Marcel A Verheijen, Wilhelmus M M (Erwin) Kessels, Vincent Vandalon, Ageeth A Bol

Publikováno v: 2D Materials, 9(2):025016. Institute of Physics

The unique optical and electronic properties of two-dimensional transition metal dichalcogenides (2D TMDs) make them promising materials for applications in (opto-)electronics, catalysis and more. Specifically, alloys of 2D TMDs have broad potential

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::824ccbff245aa0f968e560d8404f326a
https://doi.org/10.1088/2053-1583/ac54ef

Common Precursors and Surface Mechanisms for Atomic Layer Deposition

Autor: Seán Thomas Barry, Peter George Gordon, Vincent Vandalon

Publikováno v: Comprehensive Organometallic Chemistry IV: Volume 14 Applications III. Materials Science, Nanoscience, Polymer Science and Surface Chemistry, 534-552
STARTPAGE=534;ENDPAGE=552;TITLE=Comprehensive Organometallic Chemistry IV

Organometallic compounds from across the periodic table have been investigated and employed as precursors for atomic layer deposition. Simple alkyls were employed first in 1985 and represent the most well-studied class of precursors in ALD. Progress

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::265ca5a21dceb39ec9450596cbf63c75
https://doi.org/10.1016/b978-0-12-820206-7.00117-7

Infrared and optical emission spectroscopy study of the surface chemistry in atmospheric-pressure plasma-enhanced spatial ALD of Al2O3

Autor: Richard Engeln, Erwin Kessels, Fred Roozeboom, Vincent Vandalon, Maria Antonietta Mione

Publikováno v: ECS Transactions, 92(3), 35-44. Electrochemical Society, Inc.

In the past decade, atmospheric-pressure spatial atomic layer deposition (AP-SALD) has gained momentum as a fast deposition technique in thin-film manufacturing [1]. The key benefits of conventional ALD, such as superior control of layer thickness, c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fb929b3c7c7d663c0df9100310cc0a5
https://doi.org/10.1149/09203.0035ecst

Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions

Autor: Bora Karasulu, Mariadriana Creatore, Vincent Vandalon, Harm C. M. Knoops, Wilhelmus M. M. Kessels, Saurabh Karwal

Publikováno v: Nanoscale, 13(22), 10092-10099. Royal Society of Chemistry

Oxygen is often detected as impurity in metal and metal nitride films prepared by atomic layer deposition (ALD) and its presence has profound and adverse effects on the material properties. In this work, we present the case study of HfNx films prepar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86224aa1ed886a9989326c7e8bb11190
http://wrap.warwick.ac.uk/153754/1/WRAP-atomic-insights-oxygen-incorporation-atomic-layer-deposited-conductive-nitrides-Karasulu-2021.pdf

Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications

Autor: Ageeth A. Bol, Marcel A. Verheijen, Longfei Wu, Shashank Balasubramanyam, Jan P. Hofmann, Wilhelmus M. M. Kessels, Reyhaneh Mahlouji, Vincent Vandalon, Akhil Sharma

Publikováno v: Nanotechnology
Nanotechnology, 31(25):255603. Institute of Physics

The patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs rem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a6b3ca73453ed4627da1ca6d3ab489e
https://doi.org/10.1088/1361-6528/ab7593