Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Vincent Meyers"'
Autor:
Alireza Lanjani, Benjamin McEwen, Vincent Meyers, David Hill, Winston K. Chan, Emma Rocco, Shadi Omranpour, F. Shahedipour-Sandvik
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-6 (2024)
Quantum well infrared photodetectors (QWIPs) have been demonstrated to be a suitable candidate for IR detection applications. These detectors attracted increasing interest due to their design flexibility and broad spectral absorption from short wave
Externí odkaz:
https://doaj.org/article/0557f4513c90445f82b371906fa85d8b
Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors
Autor:
Emma Rocco, Jonathan Marini, Kasey Hogan, Vincent Meyers, Benjamin McEwen, L. Douglas Bell, F. Shahedipour-Sandvik
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 2, Pp 1-12 (2022)
We review the recent progress to achieve air stable III-nitride photocathodes for applications as photon detectors. High conductivity p-type films are critically important to realize high quantum efficiency (QE) photocathodes with effective negative
Externí odkaz:
https://doaj.org/article/5a7bc1fce6c440d5abeefd7ae3b7852f
Autor:
Kasey Hogan, Miguel Rodriguez, Emma Rocco, Vincent Meyers, Benjamin McEwen, F. Shadi Shahedipour-Sandvik
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085110-085110-6 (2020)
Here, we report on the application of an electron source with high accelerating voltage (62 kV–200 kV) to simulate betavoltaic power generation capabilities of a planar GaN PIN (p-GaN/i-GaN/n-GaN) device. The in situ electrical characterization rep
Externí odkaz:
https://doaj.org/article/3abb963fd532480d8e24ded1aa384394
Autor:
Benjamin McEwen, Michael A. Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis O. Demchenko, Fatemeh Shahedipour-Sandvik
Publikováno v:
ACS Applied Electronic Materials. 4:3780-3785
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower
Autor:
Ya Fei Liu, Hong Yu Peng, Ze Yu Chen, Qian Yu Cheng, Shan Shan Hu, Balaji Raghothamachar, Michael Dudley, Ramon Collazo, Zlatko Sitar, James Tweedie, Michal Bockowski, Vincent Meyers, F. Shadi Shahedipour-Sandvik, Bing Jun Li, Jung Han
Publikováno v:
Materials Science Forum. 1062:351-355
Synchrotron X-ray topography techniques are used to characterize the microstructures in gallium nitride materials being developed for selective area doping for power electronic applications. Bulk substrates grown by different methods, epitaxial layer
Autor:
Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, Shadi Shahedipour-Sandvik
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Ronald Green, B. McEwen, Kasey Hogan, Aivars J. Lelis, Vincent Meyers, V. Kaushik, F. Nouketcha, Fatemeh Shahedipour-Sandvik, Isra Mahaboob, T. Murray, Emma Rocco
Publikováno v:
Journal of Electronic Materials. 50:80-84
In this work, the effects of post-deposition annealing in forming gas ambient on the structure of the Al2O3/GaN interface are investigated. Using capacitance–voltage (C–V) and conductance–frequency (G–f) measurements, the quality of Al2O3/GaN
Autor:
Emma Rocco, Kasey Hogan, Vincent Meyers, B. McEwen, Fatemeh Shahedipour-Sandvik, Isra Mahaboob, Sean Tozier
Publikováno v:
Journal of Electronic Materials. 49:3481-3489
A non-thermal method for removal of surface damage created by dry etching has previously been documented or n-GaN, but no such effort has been reported for p-GaN. In this study, Ga-polar p-GaN films were subjected to inductively coupled plasma reacti
Publikováno v:
IEEE Design & Test. :1-1
Autor:
Michael Alexander Reshchikov, Mykhailo Vorobiov, Oleksandr Andrieiev, Benjamin McEwen, Emma Rocco, Vincent Meyers, Denis O. Demchenko, F. Shadi Shahedipour-Sandvik
Publikováno v:
physica status solidi (b). :2200487