Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Vincent M. Kao"'
Autor:
Kin Man Yu, Wladek Walukiewicz, Joel W. Ager, Iulian Gherasoiu, Vincent M. Kao, Lothar A. Reichertz
Publikováno v:
physica status solidi c. 8:2466-2468
In this paper, we report systematic investigation of the structural and electronic properties of GaN and InxGa1-xN alloys with x up to 0.31 grown on Si (111) substrate. P-type doping of InxGa1-xN using Mg has been achieved consistently with magnesium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b050f59681d57e68fa62d716e690222
https://doi.org/10.1002/pssc.201001169
https://doi.org/10.1002/pssc.201001169
Autor:
Zuzanna Liliental-Weber, Jonathan D. Denlinger, I. N. Demchenko, M. Hawkridge, C.R. Staddon, Robert W. Martin, Wladek Walukiewicz, R. Broesler, Vincent M. Kao, C. T. Foxon, F. Luckert, Kin Man Yu, Sergei V. Novikov
Publikováno v:
physica status solidi c. 7:1847-1849
A new alloy system, the GaN(sub 1-x)As(sub x) alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 x 0.75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf1a761fb9535a4d08c774275ebf917
https://doi.org/10.1002/pssc.200983430
https://doi.org/10.1002/pssc.200983430
Autor:
Wladek Walukiewicz, Joel W. Ager, Vincent M. Kao, Iulian Gherasoiu, Lothar A. Reichertz, Kin Man Yu, M. Hawkridge
Publikováno v:
physica status solidi (b). 247:1747-1749
Using plasma-assisted molecular beam epitaxy (PA-MBE), high quality InxGa1-xN layers with x in the range from 25 to 31% have been grown on silicon (111) substrates. The polarity of the layers has been found to impact the incorporation of In, with Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d657120dabc3937b3ceb865802fbdf6
https://doi.org/10.1002/pssb.200983462
https://doi.org/10.1002/pssb.200983462
Autor:
Vincent M. Kao, Joel W. Ager, Lothar A. Reichertz, Wladek Walukiewicz, Iulian Gherasoiu, Kin Man Yu
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
We report on the progress towards a high efficiency InGaN/Si tandem hybrid solar cell. The proof of principle has been demonstrated in a 5 × 5 mm III-nitride/Si dual junction solar cell, with p/n GaN junction grown by molecular beam epitaxy (MBE) fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9403092a9b67f2e412af138fb86351
https://doi.org/10.1109/pvsc.2010.5614652
https://doi.org/10.1109/pvsc.2010.5614652
Autor:
Wladek Walukiewicz, Mitsuhiro Nishio, P.R. Stone, Jeffrey W. Beeman, Lothar A. Reichertz, Kin Man Yu, Tooru Tanaka, Oscar D. Dubon, Vincent M. Kao
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
We describe the fabrication of ZnTe 1−x O x intermediate band solar cell (IBSC) using the combination of oxygen ion implantation and pulsed laser melting. Also, we report the first demonstration of homojunction ZnTe solar cells in which n-ZnTe laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e14dd49e0300a96a2ea3da9b47f0954b
https://doi.org/10.1109/pvsc.2010.5614215
https://doi.org/10.1109/pvsc.2010.5614215
Autor:
Mitsuhiro Nishio, Wladek Walukiewicz, Jeffrey W. Beeman, P. R. Stone, Tooru Tanaka, Kin Man Yu, Oscar D. Dubon, Lothar A. Reichertz, Vincent M. Kao
Publikováno v:
Journal of Applied Physics. 108:024502
We report on the proof of photovoltaic activity of homojunction ZnTe solar cells in which n-ZnTe layers are fabricated by thermal diffusion of Al into p-ZnTe at several diffusion times to control the junction depth. An open circuit voltage of approxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b815780a09105d705b6c00a2ba76d46d
https://doi.org/10.1063/1.3463421
https://doi.org/10.1063/1.3463421
Autor:
Wladek Walukiewicz, Iulian Gherasoiu, Vincent M. Kao, Kin Man Yu, Joel W. Ager, Lothar A. Reichertz
Publikováno v:
Applied Physics Express. 2:122202
We report on the proof of principle of a III–nitride/silicon tandem solar cell. Photovoltaic activity is demonstrated in a 0.25 cm2 dual junction solar cell, made of p- and n-type GaN layers which were grown by molecular beam epitaxy (MBE) on a sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a52cadce2b4f3503c74cb3b19089274a
https://doi.org/10.1143/apex.2.122202
https://doi.org/10.1143/apex.2.122202