Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Vincent M. Cowan"'
Publikováno v:
Infrared Physics & Technology. 97:448-455
Recent investigations demonstrated that III-V-based nBn infrared detectors typically experience relatively significant performance degradation under 63 MeV proton irradiation due to displacement damage, limiting their viability for certain space-base
Autor:
Zahra Taghipour, John E. Scheihing, Sanjay Krishna, Ted Schuler-Sandy, Christian P. Morath, Stephen Myers, Vincent M. Cowan, Eli A. Garduno, Alireza Kazemi, Elizabeth H. Steenbergen, Gamini Ariyawansa, Sen Mathews, Seung Hyun Lee
Publikováno v:
Infrared Physics & Technology. 88:114-118
We report a Mid-Wavelength Infrared (MWIR) barrier photodetector based on the InAs/GaSb/AlSb type-II superlattice (T2SL) material system. The nBp design consists of a single unipolar barrier (InAs/AlSb SL) placed between a 4 µm thick p-doped absorbe
Autor:
Eli A. Garduno, Vincent M. Cowan, Christian P. Morath, Elizabeth H. Steenbergen, Geoffrey D. Jenkins
Publikováno v:
IEEE Transactions on Nuclear Science. 64:1042-1047
Noise spectra of type-II strained layer superlattice midwave infrared photodetectors were compared pre- and post-irradiation by a proton fluence of $\mathrm {7.5\times 10^{11}~ cm^{-2}}$ [total ionizing dose equivalent of 100 krad (Si)] and related t
Publikováno v:
IEEE Transactions on Nuclear Science. 64:74-80
Ongoing studies to characterize and improve the radiation tolerance of the quantum efficiency (QE) in III-V-based, unipolar barrier infrared detectors, such as nBn’s, require accurate knowledge of the detector QE damage factor. Here, results of suc
Temperature-Dependent Minority-Carrier Mobility inp-TypeInAs/GaSbType-II-Superlattice Photodetectors
Autor:
Sanjay Krishna, Zahra Taghipour, Elizabeth H. Steenbergen, C.P. Morath, Ganesh Balakrishnan, Vincent M. Cowan, Seung Hyun Lee, S.A. Myers, Sen Mathews
Publikováno v:
Physical Review Applied. 11
Type-II superlattices (T2SLs) of narrow-band-gap semiconductors hold great promise for mid- and long-wavelength infrared (IR) detectors. To improve photodiodes based on these superlattices, understanding of minority-carrier transport along the growth
Autor:
Sen Mathews, Christian P. Morath, Sanjay Krishna, Edward H. Aifer, Zahra Taghipour, S. I. Maximenko, Ganesh Balakrishnan, Vincent M. Cowan, Elizabeth H. Steenbergen
Publikováno v:
Infrared Technology and Applications XLIV.
To improve the performance of photodiodes based on narrow-bandgap InAs/GaSb type-II strained layer superlattices (T2SLs), knowledge of the vertical minority carrier transport is necessary. For this purpose, the key parameters influencing vertical min
Autor:
Preston T. Webster, Jin K. Kim, Lilian K. Casias, Christian P. Morath, Elizabeth H. Steenbergen, Sanjay Krishna, Ganesh Balakrishnan, Vincent M. Cowan
Publikováno v:
Infrared Technology and Applications XLIV.
Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with p-type abso
Publikováno v:
Infrared Physics & Technology. 70:70-75
Type-II Strained Layer Superlattice (T2SLS) infrared photodetectors have been in development over the last decade. T2SLS offers a theoretically longer Auger recombination lifetime than traditional mercury cadmium telluride (MCT), which presumably tra
Publikováno v:
IEEE Transactions on Nuclear Science. 62:512-519
An examination of the collective results from recent experiments quantifying the performance degradation rates of III-V-based, unipolar barrier infrared detectors with various designs and materials, cutoff wavelengths and operating conditions due to
Publikováno v:
American Journal of Space Science. 3:3-27
A multi-timescale hybrid model is proposed to study microscopically the degraded performance of electronic devices, covering three individual stages of radiation effects studies, including ultra-fast displacement cascade, intermediate defect stabiliz