Zobrazeno 1 - 10 of 12 pro vyhledávání: '"Vincent Guiot"'
1
Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators
Autor: Marcelo J. Rozenberg, Etienne Janod, Julien Tranchant, Vincent Guiot, Benoit Corraze, Sabrina Salmon-Bourmand, Catherine Guillot-Deudon, Laurent Cario, Pablo Stoliar
Publikováno v: Advanced Materials
Advanced Materials, Wiley-VCH Verlag, 2013, 25 (23), pp.3222-3226. ⟨10.1002/adma.201301113⟩
International audience; One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e78e36cd6c5dde49720ba06c265f54fe
https://doi.org/10.1002/adma.201301113
Zobrazit plný text záznamu
2
Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8–yTey (0 ≤ y ≤ 6.5)
Autor: Benoit Corraze, Vincent Guiot, Etienne Janod, Laurent Cario
Publikováno v: Chemistry of Materials
Chemistry of Materials, American Chemical Society, 2011, 23 (10), pp.2611. ⟨10.1021/cm200266n⟩
International audience; We report here the substitution of Se by Te in the Mott insulator GaTa4Se8-yTey, a lacunar spinel compound containing Ta4 tetrahedral clusters. Our synthetic and crystallographic works show that Te atoms occupy successively tw
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2734d1e827b66a694f87bee921f10618
https://doi.org/10.1021/cm200266n
Zobrazit plný text záznamu
3
Negative Colossal Magnetoresistance Driven by Carrier Type in the Ferromagnetic Mott Insulator GaV 4 S 8
Autor: Etienne Janod, Laurent Cario, Viorel Pop, Sabrina Salmon, Frédéric Christien, Benoit Corraze, Vincent Guiot, E. Dorolti
Publikováno v: Chemistry of Materials
Chemistry of Materials, American Chemical Society, 2015, 27 (12), pp.4398-4404. ⟨10.1021/acs.chemmater.5b01168⟩
We report here a study on the evolution of structural and electronic properties of the lacunar spinel compounds GaV4S8 with charge doping. In this ferromagnetic (FM) Mott insulator, the heterovalent substitutions of Ga3+ by Zn2+ or Ge4+ allow inducti
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::950b969d5c45c68b7854d84dac07528f
https://hal.archives-ouvertes.fr/hal-01725592
Zobrazit plný text záznamu
4
Nanosession: Variants of Resistive Switching
Autor: Benoit Corraze, Shinbuhm Lee, Tae Won Noh, M. Rozenberg, Rainer Waser, Hiroyuki Yamada, Jordi Suñé, Matthias H. Richter, Marcelo J. Rozenberg, Pablo Stoliar, Ming Liu, María José Sánchez, Riccardo Rurali, Marie-Paule Besland, Laurent Cario, Christian Rodenbücher, Carlo Gagli, Vincent Guiot, V. Ta Phuoc, Julien Tranchant, Jong-Bong Park, P. Levy, Myoung-Jae Lee, Krzysztof Szot, Atsushi Tsurumaki-Fukuchi, Julien Buckley, Dimitri Roditchev, Tristan Cren, Etienne Janod, Massimo Tallarida, Enrique Miranda, Carlos Acha, F. Gomez-Marlasca, Ruben Weht, Sabrina Salmon, Akihito Sawa, Dieter Schmeißer, Shibing Long, David Jiménez, Xavier Cartoixà
Publikováno v: Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany
Frontiers in Electronic Materials
Heber, Jörg and Schlom, Darrell and Tokura, Yoshinori and Waser, Rainer and Wuttig, Matthias. Frontiers in Electronic Materials, Wiley-VCH Verlag GmbH & Co. KGaA, pp.247--258, 2013, 978-3-527-66770-3 978-3-527-41191-7. ⟨10.1002/9783527667703.ch45⟩
International audience
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f092327b139fa9b757301eef7830285
https://doi.org/10.1002/9783527667703.ch45
Zobrazit plný text záznamu
6
Avalanche breakdown in GaTa4Se8−xTex narrow-gap Mott insulators
Autor: Marcelo J. Rozenberg, Pablo Stoliar, Etienne Janod, Vincent Guiot, Laurent Cario, Tristan Cren, Dimitri Roditchev, Benoit Corraze, Vinh Ta Phuoc
Publikováno v: Nature Communications. 4
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a3759c50e272d16a1b7a81deb196573
https://doi.org/10.1038/ncomms2735
Zobrazit plný text záznamu
7
Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott insulators AM4Q8
Autor: Stéphanie Salmon, Dimitri Roditchev, Vincent Dubost, Laurent Cario, Luc Lajaunie, N. Stephant, Benoit Corraze, P. Stoliar, Tristan Cren, Marie-Paule Besland, V. Ta Phuoc, Julien Tranchant, Etienne Janod, Vincent Guiot, D. Troadec, Philippe Moreau, Marcelo J. Rozenberg
Publikováno v: The European Physical Journal. Special Topics
The European Physical Journal. Special Topics, 2013, 222, pp.1046-1056. ⟨10.1140/epjst/e2013-01905-1⟩
The European Physical Journal. Special Topics, EDP Sciences, 2013, 222, pp.1046-1056. ⟨10.1140/epjst/e2013-01905-1⟩
The Mott insulator compounds AM4Q8 exhibit a new type of volatile and non volatile resistive switchings that are of interest for RRAM application. We found that above a threshold electric field E TH of the order of a few kV/cm these compounds undergo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7228496e6b3c5bd86ae77d07081cf0d6
https://hal.science/hal-00872035
Zobrazit plný text záznamu
8
ChemInform Abstract: Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8-yTey (0 ≤ y ≤ 6.5)
Autor: Benoit Corraze, Laurent Cario, Etienne Janod, Vincent Guiot
Publikováno v: ChemInform. 42
Single crystals of GaTa4Se8, GaTa4Se5.24Te2.76, GaTa4Se4Te4, GaTa4Se2Te6, and GaTa4Se1.47Te6.53 are prepared from stoichiometric mixtures of the elements (1000 °C, 160 h).
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c5424f787ac5f834d563090e078c187
https://doi.org/10.1002/chin.201131005
Zobrazit plný text záznamu
9
Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory
Autor: Marie-Paule Besland, Cristian Vaju, Benoit Corraze, E. Souchier, Etienne Janod, Vincent Guiot, Julien Tranchant, Laurent Cario, Pascale Mazoyer
Publikováno v: 2011 3rd IEEE International Memory Workshop (IMW).
We report here on a new type of non volatile resistive switching that we discovered in the whole class of Mott Insulator compounds AM 4 X 8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se). The mechanism of this resistive switching differs from the thermochemic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cfd1f9ee5a94983ed4f438c6d19c55e
https://doi.org/10.1109/imw.2011.5873220
Zobrazit plný text záznamu
10
Behavior of hydrogen ions, atoms, and molecules in alpha-boron studied using density functional calculations
Autor: Patrick R. Briddon, Philipp Wagner, Stephen F. J. Cox, Vincent Guiot, Christopher P. Ewels, James S. Lord, Irene Suarez-Martinez
Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 83 (2), pp.024101. ⟨10.1103/PhysRevB.83.024101⟩
International audience; We examine the behavior of hydrogen ions, atoms, and molecules in α-boron using density functional calculations. Hydrogen behaves as a negative-U center, with positive H ions preferring to sit off-center on interlayer bonds a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27029cedb8febcf0cad72741b024f002
http://arxiv.org/abs/1103.3374
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje