Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Vincent Edon"'
Autor:
Angélique Mahieu, Marc G. J. Feuilloley, Nathalie Leblanc, Sébastien Alix, Eloïse Gerault, Jérémie Soulestin, Vincent Edon, Caroline Terrié, Richard Gattin, Tarik Ait-Younes
Publikováno v:
European Polymer Journal
European Polymer Journal, 2013, 49 (6), pp.1234-1242. ⟨10.1016/j.eurpolymj.2013.03.016⟩
European Polymer Journal, Elsevier, 2013, 49 (6), pp.1234-1242. ⟨10.1016/j.eurpolymj.2013.03.016⟩
European Polymer Journal, 2013, 49 (6), pp.1234-1242. ⟨10.1016/j.eurpolymj.2013.03.016⟩
European Polymer Journal, Elsevier, 2013, 49 (6), pp.1234-1242. ⟨10.1016/j.eurpolymj.2013.03.016⟩
International audience; Within the recent years, researches dealing with the applications of intelligent and active packaging for food applications have taken a great importance. Intelligent packaging-systems are used to inform and advertise the cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b799f73aa87b473699171a1f9b3f3d1d
https://doi.org/10.1016/j.eurpolymj.2013.03.016
https://doi.org/10.1016/j.eurpolymj.2013.03.016
Autor:
Omar Elmazria, Vincent Edon, Ventsislav Yantchev, F. Omnès, Roland Salut, Fabien Bénédic, Céline Gesset, Samuel Saada, Badreddine Assouar, Ilia Kartadjiev, Sylvamn Ballandras, Philippe Bergonzo, Denis Remiens
Publikováno v:
Proceedings of the 2009 IEEE International Ultrasonics Symposium
IEEE International Ultrasonics Symposium
IEEE International Ultrasonics Symposium, 2009, Italy. pp.927-930, ⟨10.1109/ULTSYM.2009.5441638⟩
IEEE International Ultrasonics Symposium
IEEE International Ultrasonics Symposium, 2009, Italy. pp.927-930, ⟨10.1109/ULTSYM.2009.5441638⟩
A lot of work has been dedicated to evaluate the interest of Diamond films for the development of high frequency surface acoustic wave (SAW) devices for various Radio- Frequency (RE) applications. The main interest of such a material consists in its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beb03c381e178d400ff7ef17187b8192
https://hal.science/hal-00474524
https://hal.science/hal-00474524
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2008, 516 (22), pp.7974. ⟨10.1016/j.tsf.2008.04.006⟩
thin solid films
EMRS 2007 Fall Meeting Symposium H: Current trends in optical and x-ray metrology of advanced materials and devices II Warsaw, Poland
EMRS 2007 Fall Meeting Symposium H: Current trends in optical and x-ray metrology of advanced materials and devices II Warsaw, Poland, Sep 2007, Poland. pp.7974, ⟨10.1016/j.tsf.2008.04.006⟩
Thin Solid Films, Elsevier, 2008, 516 (22), pp.7974. ⟨10.1016/j.tsf.2008.04.006⟩
thin solid films
EMRS 2007 Fall Meeting Symposium H: Current trends in optical and x-ray metrology of advanced materials and devices II Warsaw, Poland
EMRS 2007 Fall Meeting Symposium H: Current trends in optical and x-ray metrology of advanced materials and devices II Warsaw, Poland, Sep 2007, Poland. pp.7974, ⟨10.1016/j.tsf.2008.04.006⟩
LaAlO 3 and HfAl x O y thin films have been deposited by magnetron sputtering for replacement of SiO 2 in new Complementary Metal Oxide Semiconductor applications. A three-layer model was found both in X-ray reflectivity (XRR) and spectroscopic ellip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3ed519146404316ae1ab4b5b8adc5cf
https://hal.archives-ouvertes.fr/hal-00430050
https://hal.archives-ouvertes.fr/hal-00430050
Autor:
Karen Paz Bastos, Vincent Edon, Olivier Durand, B. Agius, Carlos Driemeier, L. Salvador, I. J. R. Baumvol, Cristiano Krug, M. C. Hugon, C. Eypert, L. Miotti
Publikováno v:
Integrated Ferroelectrics
Integrated Ferroelectrics, Taylor & Francis, 2008, pp.129. ⟨10.1080/10584580802088991⟩
Integrated Ferroelectrics, 2008, pp.129. ⟨10.1080/10584580802088991⟩
Integrated Ferroelectrics, Taylor & Francis, 2008, pp.129. ⟨10.1080/10584580802088991⟩
Integrated Ferroelectrics, 2008, pp.129. ⟨10.1080/10584580802088991⟩
Thermal stability, electrical and structural properties induced by nitrogen incorporation in lanthanum-based high-k dielectrics were investigated. Thermal growth of a thin silicon oxynitride previously to LaAlO3 deposition induced higher dielectric c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88f9d39f07cd879f82423ce6a0139a0d
https://hal.archives-ouvertes.fr/hal-00492043
https://hal.archives-ouvertes.fr/hal-00492043
Autor:
B. Agius, Z. Li, Vincent Edon, Céline Eypert, Olivier Durand, Israel Jacob Rabin Baumvol, Cristiano Krug, M. C. Hugon
Publikováno v:
Applied Physics Letters. 90:122905
The electrical characteristics of RuO2∕HfAlO∕SiON∕Si(001) capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e293b9eae8b0b8dae754d52c6294b869
https://doi.org/10.1063/1.2715112
https://doi.org/10.1063/1.2715112
Autor:
M. C. Hugon, Karen Paz Bastos, Carlos Driemeier, B. Agius, Israel Jacob Rabin Baumvol, L. Miotti, Vincent Edon
Publikováno v:
Applied Physics Letters. 87:022901
LaAlO3 films were deposited on p-type Si(100) by sputtering from a LaAlO3 target. C×V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b16cbed586a661c5b249dad2495c50
https://doi.org/10.1063/1.1989447
https://doi.org/10.1063/1.1989447
Autor:
Miotti, Leonardo, Driemeier, Carlos, Tatsch, Felipe, Radtke, Cláudio, Baumvol, Israel Jacob Rabin, Vincent, Edon, Hugon, Marie Christine, Agius, Bernard
Publikováno v:
MRS Online Proceedings Library; 2006, Vol. 917 Issue 1, p1-6, 6p