Výsledky vyhledávání - "Vincent E. Sacksteder"

Phase-coherent loops in selectively-grown topological insulator nanoribbons

Autor: Jonas Kölzer, Daniel Rosenbach, Thomas Schäpers, Detlev Grützmacher, Abdur Rehman Jalil, Tobias Schmitt, Peter Schüffelgen, Christian Weyrich, Vincent E. Sacksteder, Michael Schleenvoigt, Hans Lüth, Gregor Mussler

Publikováno v: Nanotechnology 31(32), 325001 (2020). doi:10.1088/1361-6528/ab898a
Nanotechnology 31(32), 325001-(2020). doi:10.1088/1361-6528/ab898a

Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ad17156915ff6da97f46a6d86a42555
https://doi.org/10.1088/1361-6528/ab898a

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Akademický článek

Phase-coherent loops in selectively-grown topological insulator nanoribbons.

Autor: Kölzer, Jonas, Rosenbach, Daniel, Weyrich, Christian, Schmitt, Tobias W, Schleenvoigt, Michael, Jalil, Abdur Rehman, Schüffelgen, Peter, Mussler, Gregor, IV, Vincent E Sacksteder, Grützmacher, Detlev, Lüth, Hans, Schäpers, Thomas

Publikováno v: Nanotechnology; 8/7/2020, Vol. 31 Issue 32, p1-10, 10p

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Transition between localized and extended states in the hierarchical Anderson model

Autor: Giorgio Parisi, Luca Leuzzi, Fernando L. Metz, Vincent E. Sacksteder

Publikováno v: Physical review. B, Condensed matter and materials physics 88 (2013): 045103. doi:10.1103/PhysRevB.88.045103
info:cnr-pdr/source/autori:Metz, F. L.; Leuzzi, L.; Parisi, G.; Sacksteder, V./titolo:Transition between localized and extended states in the hierarchical Anderson model/doi:10.1103%2FPhysRevB.88.045103/rivista:Physical review. B, Condensed matter and materials physics/anno:2013/pagina_da:045103/pagina_a:/intervallo_pagine:045103/volume:88
Physical Review B

We present strong numerical evidence for the existence of a localization-delocalization transition in the eigenstates of the 1-D Anderson model with long-range hierarchical hopping. Hierarchical models are important because of the well-known mapping

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6953c0001394444358f835ce53b482bd
http://arxiv.org/abs/1303.2012

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Hole Spin Helix: Anomalous Spin Diffusion in Anisotropic Strained Hole Quantum Wells

Autor: B. Andrei Bernevig, Vincent E. Sacksteder

We obtain the spin-orbit interaction and spin-charge coupled transport equations of a two-dimensional heavy hole gas under the influence of strain and anisotropy. We show that a simple two-band Hamiltonian can be used to describe the holes. In additi

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Phase structure of the topological Anderson insulator

Autor: Hua Jiang, Xincheng Xie, Dongwei Xu, Vincent E. Sacksteder, Junjie Qi, Jie Liu

Publikováno v: Physical Review B. 85

We study the disordered topological Anderson insulator in a 2-D (square not strip) geometry. We first report the phase diagram of finite systems and then study the evolution of phase boundaries when the system size is increased to a very large $1120

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60109da53ae4a8b67ef16f6c475787f9
https://doi.org/10.1103/physrevb.85.195140

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Disorder induced field effect transistor in bilayer and trilayer graphene

Autor: Juntao Song, Dongwei Xu, Vincent E. Sacksteder, Qing-feng Sun, Haiwen Liu, Xincheng Xie, Hua Jiang

We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only one of the

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Sums over geometries and improvements on the mean field approximation

Autor: IV Vincent E. Sacksteder

The saddle points of a Lagrangian due to Efetov are analyzed. This Lagrangian was originally proposed as a tool for calculating systematic corrections to the Bethe approximation, a mean-field approximation which is important in statistical mechanics,

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Parallel field magnetoresistance in topological insulator thin films

Autor: Yong-qing Li, Xi Dai, T. Guan, Kehui Wu, Lin Gu, Wei Yang, Changgan Zeng, Jian Liao, Guangyu Zhang, Chaojing Lin, Vincent E. Sacksteder, Xiao Wang, Qinhui Zhang, Xu He

Publikováno v: ResearcherID

We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin films are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b5eaf44ce407c2801f2dc6264d873d7
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=CCC&KeyUT=CCC:000322113300002&KeyUID=CCC:000322113300002

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