Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Vincent De Heyn"'
Autor:
E. Dupuy, Geert Mannaert, Ben Kaczer, Jacopo Franco, Vincent De Heyn, Narendra Parihar, Anne Vandooren, Gaspard Hiblot, Sylvain Baudot, Abdelkarim Mercha
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:192-198
This work reports on charging damage induced by gate antennae in high- $\kappa $ (HK) Replacement Metal Gate (RMG) technology for the HK-first and HK-last integration flows, comparing plate and comb layouts. For the HK-first devices, a significant de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc0947d9b4776bf4c36e60ab5ff38ba
https://doi.org/10.1109/tdmr.2021.3073473
https://doi.org/10.1109/tdmr.2021.3073473
Autor:
Narendra Parihar, Goutham Arutchelvan, Jacopo Franco, Sylvain Baudot, Ann Opedebeeck, Steven Demuynck, Hiroaki Arimura, Lars-Ake Ragnarsson, Jerome Mitard, Vincent De Heyn, Abdelkarim Mercha
Publikováno v:
2021 IEEE International Integrated Reliability Workshop (IIRW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::379c0969b9f758c2c5cea0b7c7f20ab2
https://doi.org/10.1109/iirw53245.2021.9635605
https://doi.org/10.1109/iirw53245.2021.9635605
Autor:
Karen Scheir, Piet Wambacq, Bob Verbruggen, Bertrand Parvais, Jonathan Borremans, Vincent De Heyn, Abdelkarim Mercha, Malgorzata Jurczak, V. Subramanian, Stefaan Decoutere, Geert Van der Plas, S. Donnay
Publikováno v:
2006 Proceedings of the 32nd European Solid-State Circuits Conference.
Scaling to 45 nm node and below might necessitate the use of new processing steps (e.g. new gate stacks) or new device concepts such as FinFETs. Although intrinsic transistor speed increases with scaling, some analog performance parameters tend to de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fec9f6cf5cdacc8b01fb96b83146932
https://doi.org/10.1109/esscir.2006.307529
https://doi.org/10.1109/esscir.2006.307529
Autor:
Claude Desset, Piet Wambacq, Bart van Poucke, Mustafa Badaroglu, Julien Ryckaert, Vincent De Heyn, Geert Van der Plas
Publikováno v:
EURASIP Journal on Wireless Communications and Networking, Vol 2006, Iss 1, p 072430 (2006)
Ultra-wideband (UWB) impulse radios show strong advantages for the implementation of low-power transceivers. In this paper, we analyze the impact of CMOS technology scaling on power consumption of UWB impulse radios. It is shown that the power consum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d251d599475614519baddc0d87e6d2f8