Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Vincent D.-H. Hou"'
Autor:
Tzu‐Ang Chao, Chih‐Piao Chuu, San‐Lin Liew, I‐Fan Hu, Sheng‐Kai Su, Shengman Li, Shih‐Chu Lin, Vincent D.‐H. Hou, H.‐S. Philip Wong, Iuliana Radu, Wen‐Hao Chang, Gregory Pitner, Han Wang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 6, Pp n/a-n/a (2024)
Abstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocit
Externí odkaz:
https://doaj.org/article/0fe972dcf6f249529d0f673eb7ad5042
Autor:
Mahendra DC, Ding-Fu Shao, Vincent D.-H. Hou, Arturas Vailionis, P. Quarterman, Ali Habiboglu, M. B. Venuti, Fen Xue, Yen-Lin Huang, Chien-Min Lee, Masashi Miura, Brian Kirby, Chong Bi, Xiang Li, Yong Deng, Shy-Jay Lin, Wilman Tsai, Serena Eley, Wei-Gang Wang, Julie A. Borchers, Evgeny Y. Tsymbal, Shan X. Wang
Publikováno v:
Nature Materials. 22:591-598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38ddfaf114ccdc6afc4e1677c519953
https://doi.org/10.1038/s41563-023-01522-3
https://doi.org/10.1038/s41563-023-01522-3
Autor:
Fei Huang, Matthias Passlack, San Lin Liew, Zhouchangwan Yu, Qing Lin, Aein Babadi, Vincent D.-H. Hou, Paul C. McIntyre, S. Simon Wong
Publikováno v:
IEEE Electron Device Letters. 43:212-215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5875f52e006f696f6e26a425edceeea
https://doi.org/10.1109/led.2021.3136309
https://doi.org/10.1109/led.2021.3136309
Autor:
Shao-Ming Yu, Y.-H. Lee, Jau-Yi Wu, Gary T. Chen, Dawei Heh, Xinyu Bao, Carlos H. Diaz, Chen Yu-Sheng, P. J. Liao, Chih-Hung Nien, Vincent D.-H. Hou, Wen-Hsien Kuo
Publikováno v:
IRPS
PCRAM SET/RESET cycling caused GST component segregation and void formation, thus leading to cell failure. We compared electrical cell characteristics and failure analysis of GST with various Ge compositions to understand the GST material segregation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ee4306f02d7e44f3b5502785df3cb0
https://doi.org/10.1109/irps46558.2021.9405168
https://doi.org/10.1109/irps46558.2021.9405168
Autor:
Shy-Jay Lin, Chong Bi, Xiang Li, Masashi Miura, Vincent D.-H. Hou, Serena Eley, Ding-Fu Shao, Arturas Vailionis, Wilman Tsai, Julie A. Borchers, Yong Deng, Fen Xue, Mahendra Dc, Patrick Quarterman, Yen Lin Huang, Weigang Wang, Ali Habiboglu, Shan X. Wang, Evgeny Y. Tsymbal, Brian Kirby, Brooks Venuti
High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-ax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::529513f6031e760b0c53076dc9390020
http://arxiv.org/abs/2012.09315
http://arxiv.org/abs/2012.09315
Autor:
Xiang Li, Peng Li, Mahendra Dc, Yuri Suzuki, Vincent D.-H. Hou, Chong Bi, Shy-Jay Lin, Chien-Min Lee, Chih-Hung Nien, Shan X. Wang, Di Yi, Wilman Tsai, Fen Xue
Topological materials with large spin-orbit coupling and immunity to disorder-induced symmetry breaking show great promise for efficiently converting charge to spin. Here, we report that long-range disordered sputtered WTex thin films exhibit local c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83e60d523109a56f9f148d1a6c23899c
Autor:
Xiang Li, Vincent D.-H. Hou, Chong Bi, Shan X. Wang, Di Yi, Mahendra Dc, Chih-Hung Nien, Chien-Min Lee, Fen Xue, Shy-Jay Lin, Yuri Suzuki, Wilman Tsai, Peng Li
Publikováno v:
SSRN Electronic Journal.
Topological insulators have recently shown great promise for ultralow-power spin-orbit torque (SOT) devices thanks to their large charge-to-spin conversion efficiency originating from the spin-momentum-locked surface states. Recently, Weyl semimetals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168126c4533c4e0903be0e37eb85e25c
https://doi.org/10.2139/ssrn.3707265
https://doi.org/10.2139/ssrn.3707265
Autor:
Paul C. McIntyre, Scott T. Ueda, Emily Thomson, Mahmut Sami Kavrik, Toshihiro Aoki, Moon J. Kim, Vincent D.-H. Hou, Evgueni Chagarov, Andrew C. Kummel, Yuan Taur, Bernd Fruhberger, Kechao Tang
Publikováno v:
ACS Applied Materials & Interfaces. 10:30794-30802
The superior carrier mobility of SiGe alloys make them a highly desirable channel material in complementary metal-oxide-semiconductor (CMOS) transistors. Passivation of the SiGe surface and the associated minimization of interface defects between SiG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a54ef1261fc8793bb5aceff03d09f7
https://doi.org/10.1021/acsami.8b06547
https://doi.org/10.1021/acsami.8b06547
Autor:
Vincent D.-H. Hou, Du Li
Publikováno v:
Microscopy Today. 16:36-41
One of the main obstacles to performing electron crystallography analysis in a TEM is that the acquired electron diffraction data often exhibits some form of distortion introduced by the lens system. Recognizing this problem, Capitani et al. has prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f45afb7701cefa4602c24df77ca37ad7
https://doi.org/10.1017/s1551929500059253
https://doi.org/10.1017/s1551929500059253
Publikováno v:
MRS Proceedings. 458
Creep occurs in two phase α/β Ti alloys at room temperature and at stresses below the yield strength. Creep strains in the Widmanstatten structure are affected by colony size and by sliding at the α/β interfaces. This paper reports the results of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c62491e87d8dd77c2e545fe7a9ac3c0b
https://doi.org/10.1557/proc-458-267
https://doi.org/10.1557/proc-458-267