Modeling of the Bandgap Distribution in Bi-Axially Strained Germanium Crossbeam for Laser Applications

Autor: Alban Gassenq, Ivan Duchemin, Yann-Michel Niquet, Alain Gliere, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo

Publikováno v: IEEE Photonics Journal, Vol 14, Iss 1, Pp 1-4 (2022)

High tensile strained Ge cavities in crossbeam are promising for the development of integrated laser sources on Si. However, the optimization of such cavities remains more challenging than the uniaxial beams. Indeed, the spatial distributions of both

Externí odkaz: https://doaj.org/article/44425849f50447c496f813a9512436a4

Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures

Autor: Wei Du, Quang M. Thai, Jeremie Chrétien, Mathieu Bertrand, Lara Casiez, Yiyin Zhou, Joe Margetis, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, John Tolle, Baohua Li, Shui-Qing Yu

Publikováno v: Frontiers in Physics, Vol 7 (2019)

A silicon-based monolithic laser has long been desired. Recent demonstration of lasing from direct bandgap group-IV alloy GeSn has opened up a completely new approach that is different from the traditional III-V integration on Si. In this study, high

Externí odkaz: https://doaj.org/article/523a72001c304765b62e7efab093c99b

GeSnOI mid-infrared laser technology

Autor: Jean-Michel Hartmann, Nicolas Pauc, Emilie Sakat, Frederic Boeuf, Jérémie Chrétien, Julien Chaste, Vincent Calvo, Alexei Chelnokov, Moustafa El Kurdi, Marvin Frauenrath, Vincent Reboud, Maksym Gromovyi, Andjelika Bjelajac, Binbin Wang, Gilles Patriarche, Etienne Herth, Philippe Boucaud

Publikováno v: Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Light: Science and Applications
Light: Science and Applications, Nature Publishing Group, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
Light, Science & Applications
Light: Science and Applications, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of li

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::987c14cb4dca91d25cf88177507785cc
https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a

(Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavities

Autor: Binbin Wang, Konstantinos Pantzas, Philippe Boucaud, Vincent Calvo, Jérémie Chrétien, Isabelle Sagnes, Jean-Michel Hartmann, Frederic Boeuf, Sébastien Sauvage, Xavier Checoury, Etienne Herth, Detlev Grützmacher, Dan Buca, Nils von den Driesch, Anas Elbaz, Alexei Chelnokov, Moustafa El Kurdi, Vincent Reboud, Gilles Patriarche, Nicolas Pauc, Emilie Sakat

Publikováno v: ECS Transactions. 98:61-68

Recent achievements of direct band gap with germanium by alloying with tin or by tensile strain engineering has enabled multiple times demonstration of laser emission in the 2-4µm wavelength range. This fast and promising emergence of CMOS-compatibl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd466b0b08cfe16a2047db250117c621
https://doi.org/10.1149/09805.0061ecst

Progress in Germanium Tin (GeSn) Photonic Crystal Lasers

Autor: Quang Minh Thai, Vincent Calvo, Jean-Michel Hartmann, Jérémie Chrétien, Alexei Chelnokov, Lara Casiez, Vincent Reboud, Mathieu Bertrand, J. Aubin, Nicolas Pauc

Publikováno v: IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28 (1: Semiconductor Lasers), pp.1-9. ⟨10.1109/JSTQE.2021.3117683⟩

We report on lasing in two types of Germanium-Tin (GeSn) photonic crystal lasers, with band-edge and H4 hexagonal cavities. A GeSn 16% step-graded structure was used as the optical gain material. The strong out-of-plane emission observed in the band-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f510fef077d275208a00fd0656a8beb3
https://hal.science/hal-04025318