Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Vincent Arnal"'
Publikováno v:
Volume 10: Ocean Renewable Energy.
The present study shows preliminary results of the SOFTWIND project that aims at developing an innovative experimental test bench dedicated to floating wind turbine wave tank testing. The following methodology is based on a “software in the loop”
Autor:
Aurélien Babarit, Simon Delvoye, Vincent Arnal, Félicien Bonnefoy, Laurent Davoust, Jeroen Wackers
Publikováno v:
36th International Conference on Ocean, Offshore and Artic Engineering (OMAE2017)
36th International Conference on Ocean, Offshore and Artic Engineering (OMAE2017), Jun 2017, Trondheim, Norway. ⟨10.1115/OMAE2017-61404⟩
36th International Conference on Ocean, Offshore and Artic Engineering (OMAE2017), Jun 2017, Trondheim, Norway. ⟨10.1115/OMAE2017-61404⟩
International audience; We investigate a new concept for wave and current generation. It consists of axial-flow pumps driven such as to generate an oscillatory flow through an orifice located at one end of the flume. Oscillations of the flow lead to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcfdf7e411f6944bfccaa2af71f53d28
https://hal.archives-ouvertes.fr/hal-01563340/file/babarit2017.pdf
https://hal.archives-ouvertes.fr/hal-01563340/file/babarit2017.pdf
Publikováno v:
Volume 3A: Structures, Safety and Reliability.
The purpose of this work is to use in situ measurements during service to adjust the estimation of the cumulated damage, and achieve an increased accuracy in predicting the remaining life span of the power cable. Direct monitoring of fatigue damage i
Publikováno v:
Journées de l'hydrodynamique
Journées de l'hydrodynamique, Nov 2016, Brest, France
Journées de l'hydrodynamique, Nov 2016, Brest, France
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______212::0ba26773ed1e46fe788b13f91eaf5eba
https://hal.archives-ouvertes.fr/hal-02873969
https://hal.archives-ouvertes.fr/hal-02873969
Autor:
Olivier Joubert, Maxime Darnon, P. Brun, T. Chevolleau, C. Verove, Nicolas Posseme, R. Bouyssou, Thibaut David, Vincent Arnal
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:809-816
This work focuses on the formation of residues that grow on a metallic-hard mask after etching of porous low-k materials in fluorocarbon-based plasmas. The residue growth, which is dependent on the air exposure time after etching, causes line and via
Autor:
D. Galpin, Alexis Farcy, E. Richard, P. Brun, G. Imbert, Jonathan Pradelles, Vincent Jousseaume, M. Assous, B. Icard, Daniel Barbier, C. Jayet, C. Monget, Sonarith Chhun, Michel Haond, Sylvain Maitrejean, Vincent Arnal, J. Guillan, S. Manakli, K. Hamioud, Aziz Zenasni
Publikováno v:
Microelectronic Engineering. 87:316-320
A 32nm node BEOL integration scheme is presented with 100nm metal pitch at local and intermediate levels and 50nm via size through a M1-Via1-M2 via chain demonstrator. To meet the 32nm RC performance specifications, extreme low-k (ELK) porous SiOCH k
Autor:
B. Blampey, Bernard Flechet, M. Sellier, M. Gallitre, L. Guibe, Vincent Arnal, Cedric Bermond, Alexis Farcy, Joaquim Torres
Publikováno v:
Microelectronic Engineering. 84:2738-2743
As IC dimensions scale down to the 32nm technology node, interconnect is more than ever the most limiting factor affecting overall circuit performance. The influence of all involved process parameters were studied as a function of target application
Autor:
Jean-Luc Duvail, A. Gohier, Agnès Granier, Tiberiu Minea, Vincent Arnal, Ch. Cardinaud, Marie-Paule Besland, M. Dubosc, S. Casimirius, Joaquim Torres
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2007, 84 (11), pp.2501. ⟨10.1016/j.mee.2007.05.024⟩
Microelectronic Engineering, Elsevier, 2007, 84 (11), pp.2501. ⟨10.1016/j.mee.2007.05.024⟩
This article reports on carbon nanotubes (CNT) grown on TiN/Cu stacks by plasma enhanced chemical vapor deposition (PECVD) at 450^oC. Ni catalyst was deposited by two techniques - physical vapor deposition (PVD) and electrochemical deposition (ECD).
Autor:
L.L. Chapelon, Olivier Joubert, P. Brun, J. Vitiello, D. Fossati, H. Chaabouni, Thierry Chevolleau, R. Delsol, M. Aimadeddine, Vincent Arnal, Alexis Farcy, Joaquim Torres
Publikováno v:
Microelectronic Engineering. 84:2595-2599
Plasma ashing and etching integration steps on porous ultra low-k (ULK) have been investigated and are found to damage the porous dielectric structural and electrical properties, leading to weak performance and reliability. In order to overcome these