Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Vincent Wiaux"'
Autor:
Natalia V. Davydova, Lieve van Look, Vincent Wiaux, Joost Bekaert, Frank Timmermans, Eelco van Setten, Bram Slachter, Laura L. Huddleston, Claire van Lare, Rongkuo Zhao, Dezheng Sun, Ming-Chun Tien, Marcel Beckers, Simon van Gorp, Cees Lambregts, Chung-Tien Li, Arthur van de Nes, Koen D'Havé, Tatiana Kovalevich, Diederik de Bruin, Stephen Hsu, Rene Carpaij
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Natalia V. Davydova, Vincent Wiaux, Joost Bekaert, Frank J. Timmermans, Bram Slachter, Tatiana Kovalevich, Eelco van Setten, Marcel Beckers, Simon van Gorp, Rongkuo Zhao, Dezheng Sun, Ming-Chun Tien, Hoon Ser, Diederik de Bruin, Stephen D. Hsu, Rene Carpaij
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Autor:
Jara Santaclara, Weimin Gao, Eric Hendrickx, Vincent Wiaux, Joern-Holger Franke, Emily Gallagher, Kannan Keizer, Tatiana Kovalevich, Jo Finders
Publikováno v:
Optical and EUV Nanolithography XXXV.
Autor:
Mark John Maslow, Vincent Wiaux, Eric Hendrickx, Joost Bekaert, Tatiana Kovalevich, Julien Ryckaert, Laurens de Winter, Kars Zeger Troost, Ming-Chun Tien, Natalia Davydova, Pieter Woltgens
Publikováno v:
Extreme Ultraviolet Lithography 2020.
Anamorphic imaging enables NA=0.55 in future EUV systems. At unchanged reticle size, the maximum on-wafer image size is reduced from the today’s full-field to a half-field of 26mm by16.5mm. Though most of the applications use a chip smaller than a
Autor:
Anton van Oosten, Timon Fliervoet, Eelco van Setten, Joern-Holger Franke, Gerardo Bottiglieri, Rene Carpaij, Dong-Seok Nam, Fei Liu, Natalia Davydova, Vincent Wiaux, Joseph Zekry, John McNamara, Patrick P. Naulleau, Markus P. Benk, Ken Goldberg
Publikováno v:
Extreme Ultraviolet Lithography 2020.
The next-generation high-NA EUV scanner is being developed to enable patterning beyond the 3-nm technology node. Design and development of the scanner are based on rigorous litho-simulations. It is important to verify key imaging simulation findings
Autor:
Kevin Lucas, Ryoung-han Kim, Eric Hendrickx, Vicky Philipsen, Weimin Gao, Lawrence S. Melvin, Wolfgang Hoppe, Vincent Wiaux
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
As minimum feature size shrinks to a metal pitch of 21 nm, the current extreme ultra violet (EUV) lithographic tool with a numeric aperture (NA) of 0.33 will face resolution limit for some critical layers. High NA (0.55) EUV with anamorphic optics or
Autor:
Weimin Gao, Itaru Kamohara, Eric Hendrickx, Lawrence S. Melvin, Victor Blanco, Vincent Wiaux, Ivan Ciofi, R. H. Kim, Yves Saad, Vicky Philipsen
Publikováno v:
SPIE Proceedings.
In 5nm node, even minor process variation in extreme ultraviolet lithography (EUVL) can bring significant impact to the device performance. Except for the overlay and critical dimension uniformity (CDU), EUV specific effects, such as shadowing, three
Autor:
Alessandro Vaglio Pret, Vincent Wiaux, Staf Verhaegen, Nadia Vandenbroeck, Patrick Wong, Roel Gronheid
Publikováno v:
Journal of Photopolymer Science and Technology. 23:185-191
Various material approaches for more cost-effective double patterning have been proposed during the past few years. Resolution capabilities of these approaches using dipole illumination are documented in literature. In this paper it is investigated w
Autor:
Roel Gronheid, Rik Jonckheere, Vincent Wiaux, A.M. Goethals, M. Maenhoudt, Geert Vandenberghe, Eric Hendrickx, P. Jansen, Kurt G. Ronse
Publikováno v:
CICC
There are still three major technological lithography options for high volume manufacturing at the 32 nm half pitch node: 193 nm immersion lithography with high index materials, enabling NA > 1.6; 193 nm double patterning and EUV lithography. In this
Autor:
Staf Verhaegen, Mireille Maenhoudt, Vincent Wiaux, Sang Uhk Rhie, Lawrence S. Melvin, Brian Ward, Kevin Lucas, Hua Song
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2434-2440
Double patterning is a manufacturing process targeted for the 22nm half pitch manufacturing node that harbors strong potential for reaching high volume manufacturing. The double patterning process requires twice as many manufacturing steps for a devi