Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Vince Plachecki"'
Autor:
Jun Ye, Yzzer Roman, Ming-Chun Tien, Dongqing Zhang, Pieter Scheijgrond, Rongkuo Zhao, Zuanyi Li, Xiaoyang Li, Will Conley, Dezheng Sun, Michael Crouse, Jing Su, Xiaolong Zhang, Chen Liu, Vince Plachecki, Howell Rafael C, John He, Hai Li, Stephen Hsu, Xiaobo Xie
Publikováno v:
Optical Microlithography XXXIV.
Over the years, lithography engineers have continued to focus on CD control, overlay and process capability to meet node requirements for yield and device performance. Previous work by Fukuda1 developed a multi-exposure technique at multi-focus posit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05b8fdc60085887dee9daf5f1de08819
https://doi.org/10.1117/12.2585651
https://doi.org/10.1117/12.2585651
Autor:
Francis Goodwin, Lars W. Liebmann, Yulu Chen, Stephen Hsu, Itty Matthew, Mohamed Salama, Derren N. Dunn, Keith Gronlund, Vince Plachecki, Michael Crouse, Nicole Saulnier
Publikováno v:
SPIE Proceedings.
The initial readiness of EUV patterning was demonstrated in 2016 with IBM Alliance's 7nm device technology. The focus has now shifted to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. Thus, Design Technology C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f9882370d66832acbcbb46f9a246316
https://doi.org/10.1117/12.2260865
https://doi.org/10.1117/12.2260865
Autor:
Vince Plachecki, Keith Gronlund, Yulu Chen, Michael Crouse, Stephen Hsu, Ryoung-han Kim, Obert Wood
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
EUV lithography is uniquely positioned to extend single exposure solutions for critical imaging layers at the 7 nm technology node and beyond. In this work, we demonstrate the application of advanced EUV resolution enhancement techniques to enable bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6df940011cfb3859a5f235ad5895e04
https://doi.org/10.1117/12.2219177
https://doi.org/10.1117/12.2219177
Autor:
Iacopo Mochi, Emily Gallagher, Stephen Hsu, Eric Hendrickx, Bart Laenens, Shibing Wang, Friso Wittebrood, Kateryna Lyakhova, Vicky Philipsen, Timon Fliervoet, Guido Schiffelers, Vince Plachecki, Stan Baron
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Assist features are commonly used in DUV lithography to improve the lithographic process window of isolated features under illumination conditions that enable the printability of dense features. With the introduction of EUV lithography, the interacti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad81f648918bb70fb57310fe03c31b3b
https://doi.org/10.1117/12.2220025
https://doi.org/10.1117/12.2220025
Autor:
Shuo Zhao, Lei Sun, Itty Matthew, Vince Plachecki, Francis Goodwin, Zhengqing John Qi, Yulu Chen
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:06G601
The authors develop and present computational lithography solutions to mitigate the tip-to-tip variations in 7 nm and beyond metallization layers. An array of patterns that represent lithography challenges are generated from basic design rules. The l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::015c8b00e69e0989453c486fe176e647
https://doi.org/10.1116/1.4994908
https://doi.org/10.1116/1.4994908
Autor:
Tamer Coskun, Sangbong Park, Steve Hansen, Chuck Lambson, Ting Chen, Fung Chen, Jungchul Park, Linda Yu, Todd Davis, Vince Plachecki, Robert John Socha, Joep de Vocht, Stephen Hsu, Keith Gronlund, Tom Harris, Doug Van Den Broeke, Gabriel Berger
Publikováno v:
SPIE Proceedings.
Leading resist calibration for sub-0.3 k1 lithography demands accuracy 0.8) imaging characteristics, customized illuminations (measured vs. modeled pupil profiles), resolution enhancement technology (RET) mask with OPC, reticle metrology, and resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a8a01c9681ae0f8c1c92116327b9ba3
https://doi.org/10.1117/12.617218
https://doi.org/10.1117/12.617218