Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Vinayak Tilak"'
Autor:
Vinayak Tilak, Swarnagowri Addepalli, Srinivasan Swaminathan, M Satya Kishore, Robert Colborn, P. Srimathi, Sundeep Kumar
Publikováno v:
Bulletin of Materials Science. 36:667-672
Graphene sheets are synthesized by a simple method starting from graphitic oxide as a precursor. Reaction of graphitic oxide at 250 °C with a combustion mixture of urea and ammonium nitrate results in the formation of thin graphene sheets. Graphene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd6b3f2273a8694d333e796eecaeeda1
https://doi.org/10.1007/s12034-013-0527-3
https://doi.org/10.1007/s12034-013-0527-3
Publikováno v:
Materials Science Forum. :793-796
The quality of the SiC/SiO2 interface is critical to the stability and performance of MOS-based SiC power devices. Charge pumping is a flexible interface characterization technique. In this work, a significant portion of the total traps are found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89d79a5bb5704e37cb4b61476e61f303
https://doi.org/10.4028/www.scientific.net/msf.717-720.793
https://doi.org/10.4028/www.scientific.net/msf.717-720.793
Publikováno v:
Materials Science Forum. :1261-1264
This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0ae2d928b671c4c9beb31adfd69f571
https://doi.org/10.4028/www.scientific.net/msf.717-720.1261
https://doi.org/10.4028/www.scientific.net/msf.717-720.1261
Autor:
Jim Kretchmer, J. Jay McMahon, Roger Raymond Kovalec, J.T. Elson, Liangchun Yu, Vinayak Tilak, Jody Fronheiser
Publikováno v:
Materials Science Forum. :797-800
We describe fabrication of Van der Pauw (VDP) structures for characterization of gate oxides grown on 4H SiC epi surfaces. Implementation of sub-resolvable features (SRF) as a corner compensation mechanism is analyzed with challenges and advantages p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2827dffb1ac2dffde57f5486139eb904
https://doi.org/10.4028/www.scientific.net/msf.717-720.797
https://doi.org/10.4028/www.scientific.net/msf.717-720.797
Autor:
Kevin Matocha, Vinayak Tilak
Publikováno v:
Materials Science Forum. :318-325
The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the SiC-SiO2 interface. This poor interface causes several undesirable behaviors of the electrical performance of S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc9a11a5f1f2179955d2497b7aee9f24
https://doi.org/10.4028/www.scientific.net/msf.679-680.318
https://doi.org/10.4028/www.scientific.net/msf.679-680.318
Publikováno v:
Materials Science Forum. :730-733
MOSFET-based integrated circuits were fabricated on silicon carbide (SiC) substrates. SiC devices can operate at much higher temperatures than current semiconductor devices. Simple circuit components including operational amplifiers and common source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c3b832c8799e45235e92767d14ebf43
https://doi.org/10.4028/www.scientific.net/msf.679-680.730
https://doi.org/10.4028/www.scientific.net/msf.679-680.730
Autor:
Ulrike Grossner, Jody Fronheiser, Aveek N. Chatterjee, Liangchun Yu, Kevin Matocha, Vinayak Tilak
Publikováno v:
Materials Science Forum. :354-357
The gate oxide reliability and channel mobility of carbon face (000-1) 4H Silicon Carbide (SiC) MOSFETs are investigated. Several gate oxidation processes including dry oxygen, pyrogenic steam, and nitrided oxides were investigated utilizing MOS capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191eb41af477c4d7379b949b2113c2ec
https://doi.org/10.4028/www.scientific.net/msf.679-680.354
https://doi.org/10.4028/www.scientific.net/msf.679-680.354
Publikováno v:
Materials Science Forum. :479-482
We explain the role of nitrogen in simultaneously increasing the inversion channel mobility and reducing the threshold voltage of SiC MOSFET. A variety of computational techniques have been used to compute the atomic scale configuration of a nitridat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604be99ff8169a9fcd2a58921f3f6a68
https://doi.org/10.4028/www.scientific.net/msf.645-648.479
https://doi.org/10.4028/www.scientific.net/msf.645-648.479
Publikováno v:
Materials Science Forum. :1005-1008
nversion layers of 4H and 6H Silicon carbide based MOS devices are characterized by Gated Hall measurements to determine the trap density close to the conduction band edge and the main scattering mechanisms that limit the mobility. MOS gated Hall str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90904a11d373e0f56585f2dd27c8fd4f
https://doi.org/10.4028/www.scientific.net/msf.645-648.1005
https://doi.org/10.4028/www.scientific.net/msf.645-648.1005
Autor:
Kuang Sheng, John S. Suehle, Greg Dunne, Vinayak Tilak, Kevin Matocha, Liangchun Yu, Jason P. Campbell, Kin P. Cheung
Publikováno v:
Materials Science Forum. :979-982
Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overesti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c58813af3e333fa6b97a15a0985efe
https://doi.org/10.4028/www.scientific.net/msf.645-648.979
https://doi.org/10.4028/www.scientific.net/msf.645-648.979