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pro vyhledávání: '"Vinay Kumar Chinni"'
Autor:
Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 53-58 (2017)
We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface. The fabricat
Externí odkaz:
https://doaj.org/article/598af2ec20ee4785acb712283807732a