Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Vinay Chikarmane"'
Publikováno v:
Journal of Electronic Materials. 23:1261-1268
In this paper, we present electrical and material properties of thin films (100 to 400 nm) of magnetron-sputtered ferroelectric PZT for memory applications. The optimal lead-compensation power (and the resulting film composition) is independent of fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04e0e7b14e315a994b0b3120f6878a7d
https://doi.org/10.1007/bf02649888
https://doi.org/10.1007/bf02649888
Publikováno v:
Integrated Ferroelectrics. 3:113-120
A low thermal budget (with 550°C annealing) process with Ti-compensation for sputtered ferroelectric PZT thin films has been developed. PZT films with a composition near the morphotrophic phase boundary (Zr/Ti = 53/47) annealed at 550°C for 1 hr in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72d36cc220fd2a23bb7aa108c60422cd
https://doi.org/10.1080/10584589308216705
https://doi.org/10.1080/10584589308216705
Publikováno v:
MRS Online Proceedings Library. 265:313-318
The origin and the effects of asymmetrical electrical behavior in sputtered PZT (Zr/Ti=65/35) thin film capacitors with Pt electrodes have been studied. The asymmetry and constriction in the P-E hysteresis loops are understood to result from differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f416b15973e71e0ac96e41e2c47379ef
https://doi.org/10.1557/proc-265-313
https://doi.org/10.1557/proc-265-313
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1562-1568
The fabrication of high dielectric constant lead zirconate titanate thin films for dynamic random access memory application involves post‐deposition annealing to convert the low dielectric constant pyrochlore phase to the desired high dielectric co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a04be241f75cfcf6783154e2aea0c7
https://doi.org/10.1116/1.578045
https://doi.org/10.1116/1.578045
Publikováno v:
Journal of Electronic Materials. 21:503-512
Thin film capacitors of Lead Zirconate Titanate (PZT, 400 nm) of Zr/Ti ratio 65/35, deposited by reactive dc-magnetron sputtering, with low leakage current and high charge storge density(’Qc) for use as capacitor dielectrics in ultra-large scale in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d93d6f98c0df7fde53476a87c42593b4
https://doi.org/10.1007/bf02655617
https://doi.org/10.1007/bf02655617
Publikováno v:
Applied Physics Letters. 59:2850-2852
Lead zirconate titanate [PZT, Pb(ZrxTi1−x)O3, x=0.65, 400 nm] thin-film capacitors with very low leakage current and large stored charge densities (Q′c=Pmax–Pr) for ultralarge scale integration dynamic random access memory (ULSI DRAM) memory ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fccabdfeda0ce8db5a123811cf2198e8
https://doi.org/10.1063/1.106427
https://doi.org/10.1063/1.106427
Publikováno v:
MRS Proceedings. 243
The Pt-Lead Zirconate Titanate (PZT) thin film interface plays a key role in determining the electrical properties and phase transformation kinetics of Pt-PZT-Pt thin film capacitor structures. The results of the electrical and material properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19557eaea3fab320dcc8478f98eeaa53
https://doi.org/10.1557/proc-243-367
https://doi.org/10.1557/proc-243-367
Publikováno v:
MRS Proceedings. 230
The feasibility of the fabrication of thin film capacitors of Lead Zirconate Titanate (PZT) by reactive DC-Magnetron sputtering, with large switched charge and low leakage current densities for ultra-large scale integration Dynamic Random Access Memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0cbf3fee379e5cba07bd0227878b2e
https://doi.org/10.1557/proc-230-297
https://doi.org/10.1557/proc-230-297
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 38(6)
The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e12cc6d927021d41818da32fb3ced73
https://pubmed.ncbi.nlm.nih.gov/18267636
https://pubmed.ncbi.nlm.nih.gov/18267636
Autor:
J.C. Lee, C. Sudhama, Al F. Tasch, L. H. Parker, Vinay Chikarmane, William H. Shepherd, W. Miller, N. Abt, J. Carrano
Publikováno v:
MRS Proceedings. 200
This paper investigates the issues in the scaling of thin film PZT (Lead-Zirconate-Titanate) capacitors for DRAM (Dynamic Random Access Memories) applications. The test structures used were MIM (metal-insulator-metal) capacitors with platinum electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbf94f93c875afb9545a071aa1d72547
https://doi.org/10.1557/proc-200-331
https://doi.org/10.1557/proc-200-331