Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyond

Autor: Chapelon, L.L., Chaabouni, H., Imbert, G., Brun, P., Mellier, M., Hamioud, K., Vilmay, M., Farcy, A., Torres, J.

Publikováno v: In Microelectronic Engineering 2008 85(10):2098-2101

Indirect study of the $^{13}$C($\alpha$,n)$^{16}$O reaction via the $^{13}$C($^{7}$Li,t)$^{17}$O transfer reaction

Autor: Pellegriti, M.G., Hammache, F., Roussel, Pierre, Audouin, L., Beaumel, D., Descouvemont, P., Fortier, S., Gaudefroy, L., Kiener, J., Lefebvre-Schuhl, A., Stanoiu, M., Tatischeff, V., Vilmay, M.

Publikováno v: Physical Review C
Physical Review C, 2008, 77, pp.042801. ⟨10.1103/PhysRevC.77.042801⟩
Physical Review C, American Physical Society, 2008, 77, pp.042801. ⟨10.1103/PhysRevC.77.042801⟩

The 13C(alpha,n)16O reaction is considered the main neutron source for the s process in low mass asymptotic giant branch (AGB) stars. In the Gamow peak, the cross section sensitively depends on the 1/2+ subthreshold state of 17O (Ex=6.356 MeV). In th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3531fd529ff996c1d11963d7c773fe84
https://hal.in2p3.fr/in2p3-00276786

Characterization of Low-k SiOCH Dielectric for 45nm Technology and Link between the Dominant Leakage Path and the Breakdown Localization

Autor: Vilmay, M., Roy, Daniel, Volpi, F.

Publikováno v: Proc MAM 2008
Materials for Advanced Metallization Conference 2008 (MAM2008)
Materials for Advanced Metallization Conference 2008 (MAM2008), 2008, Germany

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f12e5dc31a6b0e8884c3112285b84ff7
https://hal.archives-ouvertes.fr/hal-00386261

Capacitance variation under electrical stress of SiOCH low-k dielectrics for the advanced 45nm technology node and beyond.

Autor: Vilmay, M., Roy, D., Blonkowski, S., Volpi, F., Chaix, J.-M.

Publikováno v: 2009 IEEE International Integrated Reliability Workshop Final Report; 2009, p106-110, 5p

Copper line topology impact on the reliability of low-k SIOCH for the 45nm technology node and beyond.

Autor: Vilmay, M., Roy, D., Monget, C., Volpi, F., Chaix, J.-M.

Publikováno v: 2008 IEEE International Integrated Reliability Workshop Final Report; 2008, p16-20, 5p