Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Viktoryia Zolatanosha"'
Publikováno v:
Nanomaterials, Vol 13, Iss 3, p 466 (2023)
Site-controlled Ga droplets on AlGaAs substrates are fabricated using area-selective deposition of Ga through apertures in a mask during molecular beam epitaxy (MBE). The Ga droplets can be crystallized into GaAs quantum dots using a crystallization
Externí odkaz:
https://doaj.org/article/a7de29c561674acdb97863de83199303
Autor:
Viktoryia Zolatanosha, Dirk Reuter
Publikováno v:
Microelectronic Engineering. 180:35-39
A robust shadow mask for fabrication of GaAs-based semiconductor nanostructures via selective area molecular beam epitaxy has been developed. The mask is based on a nano-patterned 100 nm thick Si 3 N 4 -membrane on a Si(100) support wafer. Into the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b085ca2ad82636d6f0339440d4fa297d
https://doi.org/10.1016/j.mee.2017.05.053
https://doi.org/10.1016/j.mee.2017.05.053
Autor:
Dirk Reuter, Viktoryia Zolatanosha
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:02D105
Droplet epitaxy is a versatile method for fabricating nanostructures, but the standard process relies on spatially random droplet formation resulting in poor control of the position of the final nanostructure. The authors demonstrate site-controlled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45168c6bffca03576b1d5fb703cb70a3
https://doi.org/10.1116/1.5013650
https://doi.org/10.1116/1.5013650