Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Viktorija Nargelienė"'
Autor:
Algimantas Lukša, Virginijus Bukauskas, Viktorija Nargelienė, Marius Treideris, Martynas Talaikis, Algirdas Selskis, Artūras Suchodolskis, Arūnas Šetkus
Publikováno v:
Crystals, Vol 13, Iss 8, p 1243 (2023)
Unique electronic properties of graphene offer highly interesting ways to manipulate the functional properties of surfaces and develop novel structures which are sensitive to physical and chemical interactions. Nano-crystalline graphene is frequently
Externí odkaz:
https://doaj.org/article/ec42e572b40447488fb2c82b6b38eb4d
Autor:
Jurgis KUNDROTAS, Aurimas ČERŠKUS, Viktorija NARGELIENĖ, Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Erik JOHANNESSEN, Agnė JOHANNESSEN
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 153-156 (2014)
The time resolved photoluminescence spectra of selectively Si-doped GaAs/AlxGa1-xAs heterostructures have been investigated over a wide temperature range from 3.6 K to 300 K in order to identify possible mechanisms behind the observed increase in rad
Externí odkaz:
https://doaj.org/article/7a306a2bbe1a4c479acefe90f15d66b4
Autor:
Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Viktorija NARGELIENĖ, Aurimas ČERŠKUS, Andžej LUČUN, Tomas ANBINDERIS, Irina PAPSUJEVA, Aleksandras NARKŪNAS, Benas KUNDROTAS, Roma RINKEVIČIENĖ
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 138-140 (2014)
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunctio
Externí odkaz:
https://doaj.org/article/f8499880ebce4b28aba14f029eba25a9
Autor:
Aurimas ČERŠKUS, Viktorija NARGELIENĖ, Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Benas KUNDROTAS, Roma RINKEVIČIENĖ
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 132-134 (2014)
The time-resolved photoluminescence of donor Si-doped GaAs/AlxGa1-xAs (x = 0.3 0.25, 0.2, 0.1) structures designed for microwave and terahertz detectors have been investigated at T = 3.6 K temperature. The excitonic, impurity and defect related emiss
Externí odkaz:
https://doaj.org/article/53d9a5e183304543a3784bb1a3318f90
Publikováno v:
Journal of Physics D: Applied Physics. 56:345305
Metal–graphene–metal (M–G–M) stacks have provided new specific methods for the integration of two-dimensional (2D) materials into three-dimensional (3D) electronic devices, such as transistors, supercapacitors, memristors and others. Intentio
Publikováno v:
Nanotechnology. 33:375402
Monolayer graphene (1LG) is frequently unpredictably modified by supporting material so that it limits development of devices. Van der Waals interaction is dominant in the models describing the in-plane processes, including the electrical charge tran
Autor:
A. Sakavičius, Virginijus Bukauskas, Viktorija Nargelienė, Ieva Matulaitienė, Arūnas Šetkus, Gvidas Astromskas, Algimantas Lukša
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:M77-M81
Autor:
Vladimir, Agafonov, Viktorija, Nargelienė, Saulius, Balakauskas, Virginijus, Bukauskas, Mindaugas, Kamarauskas, Algimantas, Lukša, Audružis, Mironas, Alfonsas, Rėza, Arūnas, Šetkus
Publikováno v:
Nanotechnology. 31(2)
Fabrication of practical devices based on the transient metal dichalcogenides (TMDs) can be successively extended to various areas of the applications if the large area growth technology can be intentionally controlled and the characteristics of the
Autor:
Algimantas Lukša, Gvidas Astromskas, M. Treideris, Arūnas Šetkus, A. Sakavičius, I. Ignatjev, Gediminas Niaura, M. Kamarauskas, Viktorija Nargelienė, Virginijus Bukauskas
Publikováno v:
Thin Solid Films. 698:137850
The properties of the planar junction between graphene layer and thin film metal structures are important for formation of the electronic devices integrating the structures of the two-dimensional materials. However, the properties of the graphene-met
Autor:
Arūnas Šetkus, A. Mironas, Vladimir Agafonov, Virginijus Bukauskas, A. Rėza, Mindaugas Kamarauskas, Algimantas Lukša, Saulius Balakauskas, Viktorija Nargelienė
Publikováno v:
Nanotechnology. 31:025602
Fabrication of practical devices based on the transient metal dichalcogenides (TMDs) can be successively extended to various areas of the applications if the large area growth technology can be intentionally controlled and the characteristics of the