Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Viktorija Kazlauskaitė"'
Autor:
S. Ašmontas, Viktorija Kazlauskaitė, Jonas Gradauskas, Jurgis Kundrotas, Aurimas Čerškus, Algirdas Sužiedėlis
Publikováno v:
Lithuanian Journal of Physics. 49:285-290
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ff61c6ea49f9e6d154ced9b434223a
https://doi.org/10.3952/lithjphys.49307
https://doi.org/10.3952/lithjphys.49307
Autor:
Algirdas Sužiedėlis, Jonas Gradauskas, Edmundas Širmulis, Steponas Ašmontas, Viktorija Kazlauskaitė
Publikováno v:
Scopus-Elsevier
We report the first experimental observation of fast photovoltage in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO2 laser pulses. This device revealed itself as a sensitive detector of millimeter waves and as a fast I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d6a45325a8345cb3e6ec55479d1abad
https://doi.org/10.12693/aphyspola.113.851
https://doi.org/10.12693/aphyspola.113.851
Autor:
Steponas Ašmontas, Algirdas Sužiedėlis, Edmundas Širmulis, Jonas Gradauskas, Viktorija Kazlauskaitė, Andžej Lučun, Tomas Anbinderis, Marília Caldas, Nelson Studart
Publikováno v:
AIP Conference Proceedings.
Planar design of Al x Ga 1−x As / GaAs heterojunction diode is proposed for the detection of microwaves as well as infrared radiation. Suitable choice of the AlAs mole fraction (x = 0.3) and doping level of the ternary Al x Ga 1−x As semiconducto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dfb5fedb0adf419536876288e3b8492
https://doi.org/10.1063/1.3295374
https://doi.org/10.1063/1.3295374
Autor:
Mindaugas Vingelis, Edmundas Širmulis, Steponas Ašmontas, Algirdas Sužiedėlis, Viktorija Kazlauskaitė, Jonas Gradauskas
Publikováno v:
SPIE Proceedings.
We present experimental study of photoresponse in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO2 laser pulses. This device revealed itself as a fast IR sensor operating at room temperature. Hot carrier effects are pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e66936c0649c6d0b7940d47a545c45ce
https://doi.org/10.1117/12.815954
https://doi.org/10.1117/12.815954
Autor:
Aurimas Čerškus, Viktorija Kazlauskaitė, Hadas Shtrikmann, Jonas Gradauskas, Irina Papsujeva, Jurgis Kundrotas, A. Kozič, Gytis Steikūnas, Steponas Ašmontas, Valerij Petkun, Algirdas Sužiedėlis, T. Anbinderis, Vladimir Umansky, Aleksandras Narkūnas
Publikováno v:
SPIE Proceedings.
Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with d-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c28958b7a984564552a4ae95347a0b39
https://doi.org/10.1117/12.726409
https://doi.org/10.1117/12.726409
Autor:
V. N. Derkach, Algirdas Sužiedėlis, Jonas Gradauskas, Steponas Ašmontas, Viktorija Kazlauskaitė
Publikováno v:
Journal of Physics: Conference Series. 193:012120
Experimental results of planar asymmetrically and symmetrically shaped hot carrier microwave detectors having five delta-doped GaAs layers are presented. The results are compared with the detectors having the same geometrical shape but only homogeneo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a51d27efd99a2507882c0d276c56847b
https://doi.org/10.1088/1742-6596/193/1/012120
https://doi.org/10.1088/1742-6596/193/1/012120