Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Viktor Havel"'
Autor:
Laura Bégon‐Lours, Stefan Slesazeck, Donato Francesco Falcone, Viktor Havel, Ruben Hamming‐Green, Marina Martinez Fernandez, Elisabetta Morabito, Thomas Mikolajick, Bert Jan Offrein
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In artificial neural networks, the “synaptic weights” connecting the neurons are adjusted during the training. Beyond silicon, functionalizing the back‐end‐of‐line (BEOL) of CMOS circuits with novel materials is a key enabler for d
Externí odkaz:
https://doaj.org/article/cc53c747321341ec83b40a6a337fe156
Autor:
Laurent Grenouillet, Philip N. Klein, Justine Barbot, Jean Coignus, Suzanne Lancaster, Stefan Slesazeck, Ole Richter, Erika Covi, Elisabetta Chicca, Athanasios Dimoulas, Viktor Havel, Quang T. Duong, Thomas Mikolajick
Publikováno v:
2021 IEEE International Symposium on Circuits and Systems (ISCAS)
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5
STARTPAGE=1;ENDPAGE=5;TITLE=2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5
STARTPAGE=1;ENDPAGE=5;TITLE=2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1af75b3353a782f4547b577c8bc65d59
https://pub.uni-bielefeld.de/record/2959788
https://pub.uni-bielefeld.de/record/2959788
Autor:
Viktor Havel, Vikas Rana, Rainer Waser, Ulrich Böttger, Stephan Menzel, Karsten Fleck, Moritz von Witzleben
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific reports 10, 16391 (2020). doi:10.1038/s41598-020-73254-2
Scientific reports 10(1), 16391 (2020). doi:10.1038/s41598-020-73254-2
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific reports 10, 16391 (2020). doi:10.1038/s41598-020-73254-2
Scientific reports 10(1), 16391 (2020). doi:10.1038/s41598-020-73254-2
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::083387204918c257467e6e915860a67f
https://doi.org/10.1038/s41598-020-73254-2
https://doi.org/10.1038/s41598-020-73254-2
Autor:
C. Pellissier, Etienne Nowak, S. Chevalliez, Furqan Mehmood, F. Mazen, T. Francois, Uwe Schroeder, F. Triozon, Sebastien Kerdiles, Thomas Mikolajick, F. Gaillard, Guillaume Rodriguez, T. Magis, Laurent Grenouillet, Viktor Havel, Jean Coignus, C. Carabasse, Nicolas Vaxelaire, Stefan Slesazeck
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
10nm Si-implanted HfO 2 is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled $.28\mu \mathrm{m}^{2}$ . capacitors demonstrate excellent endurance (109 cycles measured at 4 V, extrap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27bb758f9903d67ad4cfe33b36d749ea
https://doi.org/10.1109/vlsitechnology18217.2020.9265061
https://doi.org/10.1109/vlsitechnology18217.2020.9265061
Autor:
Halid Mulaosmanovic, Evelyn T. Breyer, Thomas Mikolajick, Stefan Slesazeck, Taras Ravsher, Viktor Havel
Publikováno v:
2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
ICECS
ICECS
A 2T2C ferroelectric memory cell consisting of a select transistor, a read transistor and two ferroelectric capacitors that can be operated either in FeRAM mode or in memristive ferroelectric tunnel junction mode is proposed. The two memory devices c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f89ad2396fdd86c8cb852e15d600e15
https://tud.qucosa.de/id/qucosa:77006
https://tud.qucosa.de/id/qucosa:77006
Autor:
Laurent Grenouillet, P. Chiquet, C. Carabasse, Evelyn T. Breyer, Uwe Schroeder, F. Aussenac, T. Francois, P. Blaise, Marc Bocquet, Claudia Richter, Stefan Slesazeck, Nicolas Vaxelaire, Virginie Loup, A. Makosiej, Monica Materano, Bastien Giraud, F. Gaillard, J. Coignus, Viktor Havel, Etienne Nowak, T. Magis, C. Pellissier
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM)
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. ⟨10.1109/IEDM19573.2019.8993485⟩
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. ⟨10.1109/IEDM19573.2019.8993485⟩
International audience; We demonstrate successful scalability of conventional 100µm diameter TiN/HZO/TiN capacitors down to 300nm by successfully co-integrating them for the first time in the Back-End-Of-Line of 130nm CMOS technology. Excellent perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beac895454f5d4cd552dee42b9cf2e5d
https://hal.science/hal-02399654
https://hal.science/hal-02399654
Autor:
Halid Mulaosmanovic, Evelyn T. Breyer, Taras Ravsher, Viktor Havel, Stefan Slesazeck, Thomas Mikolajick
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A 2TnC ferroelectric memory gain cell consisting of two transistors and two or more ferroelectric capacitors (FeCAP) is proposed. While a pre-charge transistor allows to access the single cell in an array, the read transistor amplifies the small read
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43c832f5ee03b82f3c3fa984491729f5
https://doi.org/10.1109/iedm19573.2019.8993663
https://doi.org/10.1109/iedm19573.2019.8993663
Autor:
Thomas Mikolajick, Halid Mulaosmanovic, Viktor Havel, Stefan Duenkel, Michael J. Hoffmann, Stefan Slesazeck, Benjamin Max, Evelyn T. Breyer
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW).
The polarization reversal in ferroelectric HfO 2 is adopted to store information in three distinct device classes – ferroelectric field effect transistors (FeFET), ferroelectric capacitors (FeCAP) and ferroelectric tunnel junctions (FTJ). Common to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f714166fc3e27f87c0208aa18ed8551
https://doi.org/10.1109/imw.2019.8739742
https://doi.org/10.1109/imw.2019.8739742
Autor:
Thomas Mikolajick, Talha Chohan, Furqan Mehmood, Gernot Krause, Viktor Havel, Armin Muhlhoff, Jens Trommer, Wafa Arfaoui, Stefan Slesazeck, Germain Bossu
The degradation predicted by classical DC reliability methods, such as bias temperature instability (BTI) and hot carrier injection (HCI), might not translate sufficiently to the AC conditions, which are relevant on the circuit level. The direct anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74ad45b5ce79204a9c710771f143f6c1
https://tud.qucosa.de/id/qucosa:76936
https://tud.qucosa.de/id/qucosa:76936
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. :781-784
Confocal Raman microscopy was applied in order to investigate the homogeneity of donor doping in Nb:SrTiO3 single crystals. Measurements of local Raman spectra revealed a systematic relation between the intensity of the Raman signal and the donor con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1b54649d2f5c890ed3826ce5bdf46c0
https://doi.org/10.1002/pssr.201409221
https://doi.org/10.1002/pssr.201409221