Zobrazeno 1 - 10
of 266
pro vyhledávání: '"Viktor, Sverdlov"'
Autor:
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto L. de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers. For this purpose, we extended the analysis
Externí odkaz:
https://doaj.org/article/cb96423893e34032855a31a74d44d3bf
Publikováno v:
Micromachines, Vol 15, Iss 5, p 568 (2024)
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference lay
Externí odkaz:
https://doaj.org/article/e45f3ce0861e4e449f0bf04eb5d5877f
Autor:
Viktor Sverdlov, Seung-Bok Choi
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2131 (2023)
Although the miniaturization of metal–oxide–semiconductor field effect transistors (MOSFETs)—the main driver behind an outstanding increase in the speed, performance, density, and complexity of modern integrated circuits—is continuing, numero
Externí odkaz:
https://doaj.org/article/df2a4764b44a42e583e59623aa753b95
Autor:
Tomáš Hadámek, Nils Petter Jørstad, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1581 (2023)
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin curre
Externí odkaz:
https://doaj.org/article/f38cf12742eb4f27b968073e7929ad26
Autor:
Johannes Ender, Simone Fiorentini, Roberto L. De Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 456-463 (2021)
As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding
Externí odkaz:
https://doaj.org/article/ffd89c9f04be43b0a9e6e94e1013bb54
Autor:
Simone Fiorentini, Nils Petter Jørstad, Johannes Ender, Roberto Lacerda de Orio, Siegfried Selberherr, Mario Bendra, Wolfgang Goes, Viktor Sverdlov
Publikováno v:
Micromachines, Vol 14, Iss 5, p 898 (2023)
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help
Externí odkaz:
https://doaj.org/article/55e4d69ae37746078a55b4c8e28b5b51
Publikováno v:
ECS Transactions. 111:181-186
We compute the spin torque acting on elongated magnetic layers inrecently proposed ultra-scaled STT-MRAM devices. For thispurpose we evaluate the non-equilibrium spin accumulation bysolving the coupled spin and charge transport equations. This goesbe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc28d91397384f6ebdc8e2dd6d109975
https://doi.org/10.1149/11101.0181ecst
https://doi.org/10.1149/11101.0181ecst
Autor:
Viktor Sverdlov, Nuttachai Jutong
Publikováno v:
Micromachines, Vol 13, Iss 4, p 493 (2022)
As scaling of semiconductor devices displays signs of saturation, the focus of research in microelectronics shifts towards finding new computing paradigms based on novel physical principles [...]
Externí odkaz:
https://doaj.org/article/5c7062067dfa4126999f738cc1c63c08
Publikováno v:
Journal of Systemics, Cybernetics and Informatics, Vol 16, Iss 2, Pp 55-59 (2018)
The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices. However, a rapid growth of the dynamic and stand-by power due
Externí odkaz:
https://doaj.org/article/9cb442d91b214a52818e1d739cc7cb42
Autor:
Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
Micromachines, Vol 12, Iss 4, p 443 (2021)
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a
Externí odkaz:
https://doaj.org/article/da720de6f4ad44a6895de672fbfaa807