Zobrazeno 1 - 1
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pro vyhledávání: '"Vikran Kumar"'
Publikováno v:
Semiconductor Science and Technology. 10:310-313
The effect of plasma hydrogenation in nominally undoped n-InP is studied by photoluminescence. The photoluminescence intensity increases after hydrogenation due to the passivation of non-radiative centres. The donor bound exciton luminescence increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41a365509f9c99efd52c68d6a1ca0e88
https://doi.org/10.1088/0268-1242/10/3/012
https://doi.org/10.1088/0268-1242/10/3/012
