Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Vikram Tolani"'
Autor:
Brandon Hurt, Ryan Carlson, Yao Zhang, Xiaochun Yang, Masaki Satake, Yifu Wang, Derui Li, Vikram Tolani, Daniel Price
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2876202d7fda11b7a731fd638bc880b1
https://doi.org/10.1117/12.2642401
https://doi.org/10.1117/12.2642401
Autor:
Frank Cm Wu, Chain Ping Chen, Le Wang, Chin Kuei Chang, Dongmei Wu, Jinhua Zeng, Vikram Tolani, Suo Li, Wei Chen
Publikováno v:
Photomask Technology 2021.
Comprehensive disposition of reticle defects is critical for process and yield control. Misjudging a real defect on mask may not only reduce its lithography process window but also kill thousands of wafers causing unbearable economic loss. With the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93da14db4aadf23ee4f54382c72932e4
https://doi.org/10.1117/12.2600902
https://doi.org/10.1117/12.2600902
Autor:
Claire Lu, Vikram Tolani, Harper Yu, Jason Fang, Yanghui Liu, Andy Lan, Catherine Li, Zeyu Lei, Asei Chou, Wenhao Hsu
Publikováno v:
Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b68b48fb0db2c86ac95feeecb3216be
https://doi.org/10.1117/12.2598020
https://doi.org/10.1117/12.2598020
Autor:
Peter Liu, Derui Li, Yao Zhang, Daniel Price, Ryan Gardner, Wallace Wang, Will Wang, Masaki Satake, George Hwa, Ryan Carlson, Vikram Tolani, Brandon Hurt
Publikováno v:
Photomask Technology 2020.
Mask-shops developing advanced reticles for use in high-volume semiconductor manufacturing generate an abundance of critical data. Most of this data is generated in the backend of the mask production line where critical dimensions (CDs), registration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604eea499af845bedfee7b00b4674b1c
https://doi.org/10.1117/12.2573765
https://doi.org/10.1117/12.2573765
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
Classification and Printability of EUV Mask Defects from SEM images EUV lithography is starting to show more promise for patterning some critical layers at 5nm technology node and beyond. However, there still are many key technical obstacles to overc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::934273a2dc64e8e6e3de12a9a64901ff
https://doi.org/10.1117/12.2280837
https://doi.org/10.1117/12.2280837
Autor:
Chun-Jen Chen, Vikram Tolani, Chin-Ting Yang, Sandhya Gopalakrishnan, Suresh Lakkapragada, Laurent C. Tuo, Raj Bugata, George Hwa, Kaiming Chiang, Sheng-Chang Hsu
Publikováno v:
SPIE Proceedings.
In the semiconductor IC manufacturing industry, challenges associated with producing defect-free photomasks have been dramatically increasing. At the 10nm technology node, since the 193nm immersion scanner numerical aperture has remained the same 1.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6236a8d7ae006e7cc25ceda429a2e61
https://doi.org/10.1117/12.2241482
https://doi.org/10.1117/12.2241482
Autor:
Masaki Satake, Dongxue Chen, Ying Li, Lin He, Peter Hu, Linyong Pang, Vikram Tolani, Danping Peng
Publikováno v:
aot. 1:299-321
Mask manufacturers will be impacted by two significant technology requirements at 22 nm and below: the first is the more extensive use of resolution enhancement technologies (RET), such as aggressive optical proximity correction (OPC), inverse lithog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2497aabe398304b264588be2acdf6a
https://doi.org/10.1515/aot-2012-0127
https://doi.org/10.1515/aot-2012-0127
Autor:
Thuc Dam, Tom Cecil, Dongxue Chen, Linyong Pang, Peter Hu, Bob Gleason, Ki-Ho Baik, Danping Peng, Vikram Tolani, Lin He, Guangming Xiao
Publikováno v:
ECS Transactions. 27:433-442
For semiconductor manufacturers moving toward advanced technology nodes -32nm, 22nm and below - lithography presents the greatest challenge, because it is fundamentally constrained by basic principles of optical physics. Because no major lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e843c7119a597d752d131f539fc774
https://doi.org/10.1149/1.3360656
https://doi.org/10.1149/1.3360656
Autor:
Bob Gleason, Tom Cecil, Ki-Ho Baik, Linyong Pang, Guangming Xiao, Thuc Dam, Peter Hu, Vikram Tolani
Publikováno v:
ECS Transactions. 18:299-314
In the first implimentation by Luminescent of ILT-enabled Source-Mask Optimization (SMO), an ILT-optimized mask was generated for each designated illumination condition as the source was swept through various parameter settings in order to find the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7290fa442bc78cf7bcea23923dd9df7
https://doi.org/10.1149/1.3096466
https://doi.org/10.1149/1.3096466
Autor:
Koichi Kanno, Masaki Satake, Vikram Tolani, Hiroyuki Miyashita, Kana Ohara, Masaharu Nishiguchi, Donghwan Son
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
AIMSTM is mainly used in photomask industry for verifying the print impact of mask defects on wafer CD in DUV lithography process. AIMS verification is typically used in D2D configuration, wherein two AIMS images, reference and defect, are captured a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619afb90990acf774516d704fa7d7c53
https://doi.org/10.1117/12.2197609
https://doi.org/10.1117/12.2197609