Výsledky vyhledávání - "Vikas Pendem"

Femto-Second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural Radial Potential Well and Its Dynamic Modulation

Autor: Ankit Udai, Vikas Pendem, Pratim Kumar Saha, Swaroop Ganguly, Dipankar Saha, Tarni Aggarwal

Publikováno v: ACS Photonics. 7:2555-2561

Quantum dot (QD) is slated to play a significant role in quantum technologies through its usage as a single-photon source. It also has promising applications as efficient light emitters through str...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50391fca78f65cca6d1224182defe4fb
https://doi.org/10.1021/acsphotonics.0c00905

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Determining the carrier decay kinetics in QCSE-exhibiting materials: An accurate interpretation of transient absorption spectroscopy data

Autor: Vikas Pendem, Ankit Udai, Swaroop Ganguly, Tarni Aggarwal, Dipankar Saha

Publikováno v: 2021 Photonics North (PN).

Carrier dynamics is fundamental in the optimal performance of optoelectronic devices. TAS experiments can be used to study carrier dynamics at a particular wavelength. However, the $\Delta \alpha$ kinetics in QCSE-exhibiting materials turns out to be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f8401befed76349ea0e02c4033caec9
https://doi.org/10.1109/pn52152.2021.9597914

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Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement

Autor: Swaroop Ganguly, Jaya Jha, Vikas Pendem, Dipankar Saha, Yogendra K. Yadav, Sreenadh Surapaneni

Publikováno v: Nanotechnology. 32(45)

Transport in GaN-based nanoscale devices is of supreme importance for various applications. While the transport in bulk and two-dimensional (2D) structures is relatively well understood, understanding one-dimensional (1D) transport is still at its na

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1f0c4bd6e2eb722834da46ebfece4f3
https://pubmed.ncbi.nlm.nih.gov/34343974

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Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs

Autor: Vivek Kumar Surana, Dipankar Saha, Navneet Bhardwaj, Navya Sri Garigapati, Swaroop Ganguly, Yogendra K. Yadav, Vikas Pendem, Akanksha Rawat, Mudassar Meer

Publikováno v: IEEE Transactions on Electron Devices. 65:3725-3731

We have demonstrated the potential use of thermally grown TiO2 and Al2O3 oxides as gate dielectrics for GaN-based high-electron-mobility-transistors. TiO2 and Al2O3 are found to provide negative and positive band offsets with AlGaN, respectively. A s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5995c8740b63cff94befd23e13ba6254
https://doi.org/10.1109/ted.2018.2857468

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Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Autor: Shonal Chouksey, Pratim Kumar Saha, Dipankar Saha, Vikas Pendem, Sandeep Sankaranarayanan, Swaroop Ganguly, Tarni Aggarwal, Ankit Udai

Publikováno v: Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Scientific Reports

GaN based nanostructures are being increasingly used to improve the performance of various devices including light emitting diodes and lasers. It is important to determine the strain relaxation in these structures for device design and better predict

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9992dcff2e27e41ebd4ce1516258d6bb
http://link.springer.com/article/10.1038/s41598-018-26725-6

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Improvement in Radiative Recombination Efficiency and Emission Power Density of Surface-Passivated InGaN Nano-Disk in a Wire Heterostructure Array

Autor: Dipankar Saha, Pratim Kumar Saha, Vikas Pendem, Swaroop Ganguly

Publikováno v: 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

GaN based materials are widely used for making light sources over a broad emission wavelength. The emission energy can also be tuned by choosing the degree of quantum confinement. With reduction in physical dimension, the exciton binding energy and t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5eb3c26f9a7318e4f3edf5a521cb8742
https://doi.org/10.1109/cleoe-eqec.2019.8873024

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Angle-Dependent Pump-Probe Differential Transient Absorption Spectroscopy as a Novel Technique to Examine Surface Properties of Semiconductor Nanostructures

Autor: Shonal Chouksey, Vikas Pendem, Pratim Kumar Saha, Ankit Udai, Dipankar Saha, Tarni Aggarwal, Swaroop Ganguly

Publikováno v: OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED).

We describe a non-destructive optical technique to probe semiconductor surfaces, using ultrafast pump-probe transient absorption spectroscopy (TAS). Angle-dependent TAS decouples surface and bulk differential absorptions to measure surface dynamics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a2aa623e747e00605aea7b3a7efbc047
https://doi.org/10.1364/pvled.2019.pw3c.4

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