Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Vijaya B. Neeli"'
Autor:
Georgios C. Dogiamis, Thomas W. Brown, Neelam Prabhu Gaunkar, Ye Seul Nam, Triveni S. Rane, Surej Ravikumar, Vijaya B. Neeli, Jessica C. Chou, Said Rami, Johanna Swan
Publikováno v:
IEEE Solid-State Circuits Letters. 5:178-181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eea40e1833540f132e6daddc8d14006f
https://doi.org/10.1109/lssc.2022.3191526
https://doi.org/10.1109/lssc.2022.3191526
Autor:
Georgios C. Dogiamis, Thomas W. Brown, Neelam Prabhu Gaunkar, Ye Seul Nam, Triveni S. Rane, Surej Ravikumar, Vijaya B. Neeli, Jessica C. Chou, Said Rami
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac643923eb1bf15bc64f0a4c7c53bd94
https://doi.org/10.1109/ims37962.2022.9865352
https://doi.org/10.1109/ims37962.2022.9865352
Autor:
Carlos Nieva, Zinia Tuli, Mario Weiss, Dimitri Frolov, Surej Ravikumar, Said Rami, Henning Braunisch, Hariprasad Chandrakumar, Vijaya B. Neeli, Iwen Huang, Jessica C. Chou, Yi-Shin Yeh, Neelam Prabhu Gaunkar, Telesphor Kamgaing, Triveni S. Rane, D. Correas-Serrano, Thomas W. Brown, Jeffery W. Bates, Georgios C. Dogiamis, Mauricio Marulanda, Jag Rangaswamy, Jabeom Koo, Qiang Yu, Ye Seul Nam
Publikováno v:
IEEE Solid-State Circuits Letters. 4:206-209
This letter presents a 134-GHz superheterodyne transceiver system in 22-nm CMOS for dielectric waveguides measured at reaches up to 3 m. Greater than 12 GHz of RF bandwidth and 16 QAM signaling combine to achieve 50 Gb/s with a measured EVM of −19.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a547bfa3d0f7825d9bf2a07334165f0
https://doi.org/10.1109/lssc.2021.3122080
https://doi.org/10.1109/lssc.2021.3122080
Autor:
Yi-Shin Yeh, Hyung-Jin Lee, Surej Ravikumar, Neelam Prabhu Gaunkar, Jeffery W. Bates, Jessica C. Chou, Mario Weiss, Mauricio Marulanda, Qiang Yu, Thomas W. Brown, Georgios C. Dogiamis, Jag Rangaswamy, Iwen Huang, Dimitri Frolov, Zinia Tuli, Ram Sadhwani, Triveni S. Rane, Ye Seul Nam, Carlos Nieva, Vijaya B. Neeli, Cho-Ying Lu, Said Rami, Henning Braunisch, Hariprasad Chandrakumar, Telesphor Kamgaing, D. Correas-Serrano
Publikováno v:
VLSI Circuits
A 134 GHz 16 QAM fully-packaged transceiver system for dielectric waveguides with >12 GHz of RF bandwidth built in 22nm CMOS achieves a measured EVM of -19.8 dB (~5x10-6 BER) at a reach of 3 meters at a 50 Gbps data rate at a total power consumption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::419ed97946bdfeea18105c7ca20e5ae9
https://doi.org/10.23919/vlsicircuits52068.2021.9492497
https://doi.org/10.23919/vlsicircuits52068.2021.9492497
Autor:
Yunzhe Ma, Yi-Shin Yeh, Triveni S. Rane, Carlos Nieva, Jeremy Wahl, Surej Ravikumar, Guannan Liu, Jessica C. Chou, Sell Bernhard, Mark Armstrong, Saurabh Morarka, Vijaya B. Neeli, Mauricio Marulanda, Nathan Monroe, Said Rami, Hui Fu, Dyan Ali, L. Paulson, Hyung-Jin Lee, Sameer Joglekar, Thomas C. Brown, Jabeom Koo, Jeffrey Garrett, Ruonan Han, Qiang Yu, Georgios C. Dogiamis, Eric Karl, James Waldemer, Ying Zhang
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper presents the recent mmWave and sub-THz oriented technology developments as part of RF design-technology co-optimization (DTCO) efforts in Intel 22nm FinFET process (22FFL). Several back-end-of-line (BEOL) and front-end-of-line (FEOL) impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f2fc7a955450fb986a2df6a680fade
https://doi.org/10.1109/iedm13553.2020.9372105
https://doi.org/10.1109/iedm13553.2020.9372105
Autor:
Vijaya B. Neeli, Said Rami, K. Phoa, Surej Ravikumar, Sell Bernhard, H.-J. Lee, Yuegang Zhang
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Intel 22FFL is a unique FinFET process technology optimized for RF and mmWave applications supporting superior RF performance to planar technologies with both $\boldsymbol{f_{t}}$ and $\boldsymbol{f_{max}}$ of NMOS above 300 GHz and 450 GHz respectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec3da40ea4a134cb1c96acb2b7191eec
https://doi.org/10.1109/iedm.2018.8614490
https://doi.org/10.1109/iedm.2018.8614490