Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Vijay Yelundur"'
Autor:
Hubert Seigneur, Victor Huayamave, Alain J. Kassab, Ron Eaglin, Arka Das, res Ceballos, Eduardo Divo, Adam M. Payne, Anthony M. Khoury, Vijay Yelundur
Publikováno v:
Computer Modeling in Engineering & Sciences. 122:757-777
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ff4b3556f617f3236c28034d650a9d
https://doi.org/10.32604/cmes.2020.08164
https://doi.org/10.32604/cmes.2020.08164
Publikováno v:
Solar Energy. 158:869-874
An alternative method to image essential variables like dark saturation current density, series resistance, and cell efficiency is introduced in this work. This approach combines the terminally connected diode model with a modified technique for extr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa955a6bba80b78bafcfdfd891250e5b
https://doi.org/10.1016/j.solener.2017.10.006
https://doi.org/10.1016/j.solener.2017.10.006
Autor:
Keeya Madani, Atul Gupta, Ajay Upadhyaya, Young-Woo Ok, Vinodh Chandrasekaran, Vijaykumar Upadhyaya, Ajeet Rohatgi, Brian Rounsaville, Chel-Jong Choi, Elizabeth Chang, Vijay Yelundur, Keith Tate
Publikováno v:
IEEE Journal of Photovoltaics. 6:153-158
This paper shows the results and the limitations of a 21% N-Cz 239-cm2 screen-printed cell with blanket p+ emitter and n+ back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n+ polysilicon and metal on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a76b7f82808d7a6c150d2690834a888
https://doi.org/10.1109/jphotov.2015.2496861
https://doi.org/10.1109/jphotov.2015.2496861
Autor:
Rob Janoch, Kristopher O. Davis, Andrew M. Gabor, Andrew Anselmo, Adam M. Payne, Vijay Yelundur, Geoffrey Gregory
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
The measurement of contact resistivity between the grid metallization of a solar cell and the underlying silicon wafer is most conveniently performed by cutting strips from solar cells rather than fabricating dedicated structures with variable spaced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee7fb5a9d1df30302e75fbf44b025a1
https://doi.org/10.1109/pvsc.2016.7750221
https://doi.org/10.1109/pvsc.2016.7750221
Autor:
Vijay Yelundur, H. Preston Davis, Ajeet Rohatgi, Adam M. Payne, Daniel L. Meier, Vinodh Chandrasekaran
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
A simple process is defined and executed to achieve 20% efficiency for cells fabricated on 156 mm n-Cz Si wafers. The cell structure is n+np+ with the p+ emitter being formed over most of the rear surface by Al alloying, but extended to the wafer edg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eaa650cb1d12d42cd9aaa64efa7dc36
https://doi.org/10.1109/pvsc.2016.7750074
https://doi.org/10.1109/pvsc.2016.7750074
Autor:
Vinodh Chandrasekaran, Xiaoyan Wang, Young-Woo Ok, E. O'Neill, Francesco Zimbardi, H. H. Davis, Vijay Yelundur, D. L. Meier, Ajeet Rohatgi, Adam M. Payne
Publikováno v:
IEEE Journal of Photovoltaics. 1:123-129
Ion-implanted, screen-printed, high-efficiency, stable, n-base silicon solar cells fabricated from readily available 156-mm pseudosquare Czochralski wafers are described, along with prototype modules assembled from such cells. Two approaches are pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7c9d8b1d8b502ecb46f662937301256
https://doi.org/10.1109/jphotov.2011.2169944
https://doi.org/10.1109/jphotov.2011.2169944
Autor:
Arnab Das, Andrew M. Tam, Ying-Yuan Huang, Vijay Yelundur, Aditi Jain, Adam M. Payne, Young-Woo Ok, Ajeet Rohatgi, Ajay Upadhyaya, Vinodh Chandrasekaran
Publikováno v:
Applied Physics Letters. 113:263901
This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (∼15 A) capped with boron doped poly-Si. Our boron doped po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa1c832fe2c60c00d8f460136ac85b2
https://doi.org/10.1063/1.5059559
https://doi.org/10.1063/1.5059559
Publikováno v:
Langmuir. 24:10421-10426
Silicon is employed in a variety of electronic and optical devices such as integrated circuits, photovoltaics, sensors, and detectors. In this paper, Au-assisted etching of silicon has been used to prepare superhydrophobic surfaces that may add uniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::913818fba7c119c5c0ae1186f6e8e4fd
https://doi.org/10.1021/la801206m
https://doi.org/10.1021/la801206m