Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Vijay Richard D'Costa"'
Autor:
Todd Henry, Cleon Chan, Sujith Subramanian, Lye-Hing Chua, Wei Zou, Yee-Chia Yeo, Vijay Richard D'Costa, Eugene Y.-J. Kong
Publikováno v:
IEEE Transactions on Electron Devices. 61:3159-3165
Plasma doping (PLAD), a high-throughput ion implantation technique capable of achieving ultrashallow junctions and conformal doping of 3-D structures such as fin field-effect transistors, is investigated as an alternative to conventional beam-line io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0224bf327d7f58f156f44108b3b3c12
https://doi.org/10.1109/ted.2014.2341619
https://doi.org/10.1109/ted.2014.2341619
Publikováno v:
Journal of Applied Physics. 120:063104
We investigated the compositional dependence of the near-bandgap dielectric function and the E0 critical point in pseudomorphic Ge1-xSnx alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86ec5ee2b60101a6bcf63766ea1d1040
https://doi.org/10.1063/1.4960449
https://doi.org/10.1063/1.4960449
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:041204
The authors investigated the temperature dependence of the complex dielectric function and interband transitions of pseudomorphic Ge1−xSnx (x = 0, 0.025, and 0.075) alloys using spectroscopic ellipsometry from 77 to 400 K. The dielectric functions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af29a0230f94671088050d5897522372
https://doi.org/10.1116/1.4946759
https://doi.org/10.1116/1.4946759
Autor:
Wei Wang, Saumitra K. Vajandar, Yuan Dong, Thomas Osipowicz, Sin Leng Lim, Eng Soon Tok, Yee-Chia Yeo, Vijay Richard D'Costa
Publikováno v:
Journal of Applied Physics. 119:155704
The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge1−xSnx) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39ab5a3f8842d45b8f2788f0b1090e4c
https://doi.org/10.1063/1.4947116
https://doi.org/10.1063/1.4947116
Publikováno v:
Semiconductor Science and Technology. 31:035022
We investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037–5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b75059a7e434f7ef21984cd5f0c53ef5
https://doi.org/10.1088/0268-1242/31/3/035022
https://doi.org/10.1088/0268-1242/31/3/035022
Publikováno v:
Journal of Applied Physics. 118:123102
We obtained the complex dielectric function of amorphous Ge1−xSnx (0 ≤ x ≤ 0.07) alloys using spectroscopic ellipsometry from 0.4 to 4.5 eV. Amorphous GeSn films were formed by room-temperature implantation of phosphorus into crystalline GeSn a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61eb966bc8d8efc78a2070fb5470f251
https://doi.org/10.1063/1.4931435
https://doi.org/10.1063/1.4931435
Publikováno v:
Journal of Applied Physics. 117:223106
Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a075a551d5fd3dae5a33eb68e4552e96
https://doi.org/10.1063/1.4922586
https://doi.org/10.1063/1.4922586
Autor:
Sin Leng Lim, Vijay Richard D'Costa, Wei Zou, T. K. Chan, Eng Soon Tok, Christopher R. Hatem, Todd Henry, Lye Hing Chua, Yee-Chia Yeo, Wei Wang, Thomas Osipowicz, Lanxiang Wang
Publikováno v:
Applied Physics Letters. 105:122108
We have investigated the optical properties of Ge and GeSn alloys implanted with phosphorus ions at 400 °C by spectroscopic ellipsometry from far-infrared to ultraviolet. The dielectric response of heated GeSn implants displays structural and transp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56960479ec9a5b46c0d90a4bfa036c8d
https://doi.org/10.1063/1.4896507
https://doi.org/10.1063/1.4896507
Autor:
Vijay Richard D'Costa, Qian Zhou, Eng Soon Tok, Yee-Chia Yeo, Wei Wang, T. K. Chan, Thomas Osipowicz
Publikováno v:
Journal of Applied Physics. 116:053520
Spectroscopic ellipsometry was used to investigate the optical response of pseudomorphic Ge 1− x Sn x (0 ≤ x ≤ 0.17) alloys grown directly on Ge (100) by molecular beam epitaxy. A detailed compositional study of amplitudes, broadenings, energie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75f69ec5ca67863932790a1df95bd3b1
https://doi.org/10.1063/1.4892105
https://doi.org/10.1063/1.4892105
Publikováno v:
Semiconductor Science & Technology; Mar2016, Vol. 31 Issue 3, p1-1, 1p