Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Vijay Gopal Thirupakuzi Vangipuram"'
Autor:
Kaitian Zhang, Chenxi Hu, A. F. M. Anhar Uddin Bhuiyan, Menglin Zhu, Vijay Gopal Thirupakuzi Vangipuram, Md Rezaul Karim, Benthara Hewage Dinushi Jayatunga, Jinwoo Hwang, Kathleen Kash, Hongping Zhao
Publikováno v:
Crystal Growth & Design. 22:5004-5011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93f6bfcd3515c104122f7a8cbf78e066
https://doi.org/10.1021/acs.cgd.2c00511
https://doi.org/10.1021/acs.cgd.2c00511
Publikováno v:
Journal of Vacuum Science & Technology A. 41:033206
A novel type-II InGaN-ZnSnGa2N4 quantum well (QW) structure is proposed based on recent experimental achievements for the successful epitaxy of ZnSnN2-GaN alloys and the determination of their band offsets with GaN. The simulation results indicate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2e5a9487cefe34e142f9a8b867f5837
https://doi.org/10.1116/6.0002524
https://doi.org/10.1116/6.0002524
Publikováno v:
Applied Physics Letters. 122:162101
Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b584262973b6cdaab5f458fe5422afba
https://doi.org/10.1063/5.0144584
https://doi.org/10.1063/5.0144584
Publikováno v:
Applied Physics Letters. 122:123501
High power vertical GaN devices are in great demand recently due to their potential on extremely high-power conversion efficiency. Here, we show vertical GaN p–n power diodes fabricated on bulk GaN substrates with an optimized guard ring structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeffdd29ff7d418bd3ff9bda81668907
https://doi.org/10.1063/5.0135313
https://doi.org/10.1063/5.0135313