Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Vijay Dixit"'
Autor:
Vijay Dixit, Payal Chauhan, Alkesh B. Patel, Som Narayan, P.K. Jha, G.K. Solanki, K.D. Patel, V.M. Pathak
Publikováno v:
Materials Letters: X, Vol 2, Iss , Pp - (2019)
Presently, ternary alloy engineering holds ability in promoting high performance photo detecting devices. In the present investigation, we have employed direct vapor transport technique (DVT) to grow Sb0.5Mo0.5Se2 multilayer crystal for its use as ph
Externí odkaz:
https://doaj.org/article/f2b7f1cd570c43788d3a93de450b47e7
Publikováno v:
RSC Advances. 12:28693-28706
DVT grown SnSbSe crystals were characterized using E-DAX, XPS, XRD, SEM, HRTEM, UV, PL and Raman characterizations. Photodetection parameters depict the improvement in the stability and durability of device for SbSnSe photodetector compare to SnSe.
Autor:
Vivek M. Pathak, Salil Nair, Som Narayan, Vijay Dixit, C. U. Vyas, Gunvant K. Solanki, Jolly Joy, Prafulla K. Jha
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:28739-28749
In the present investigation, Sb0.1Mo0.9Se2 single crystals belonging to semiconductor-layered transition metal di-chalcogenides (SLTMDCs) are grown by direct vapor transport (DVT) technique in a dual-zone furnace. The surface topographic properties
Autor:
Chaitanya Limberkar, Vivek M. Pathak, K. D. Patel, Vijay Dixit, Gunvant K. Solanki, Jolly Joy, Salil Nair
Publikováno v:
International Journal of Energy Research. 46:1853-1863
Publikováno v:
RSC advances. 12(44)
In the present investigation Sn
Autor:
Saurabh S. Soni, Prafulla K. Jha, Vijay Dixit, Gunvant K. Solanki, Alkesh B. Patel, K. D. Patel, Payal Chauhan, Hiren K. Machhi, Vivek M. Pathak, Som Narayan
Publikováno v:
ACS Applied Materials & Interfaces. 11:4093-4102
The solar response ability and low-cost fabrication of the photoanode are important factors for the effective output of the photoelectrochemical system. Modification of the photoanode by which its ability to absorb irradiation can be manipulated has
Autor:
Salil Nair, C. U. Vyas, Vivek M. Pathak, Gunvant K. Solanki, Jolly Joy, K. D. Patel, Vijay Dixit
Publikováno v:
Materials Science in Semiconductor Processing. 88:1-9
The present investigation deals with the preparation of antimony doped molybdenum di-selenide (Sb0.1Mo0.9Se2) single crystals and its application for detection of UV–Visible radiation. The chemical composition of the crystals grown by direct vapor
Autor:
Vijay Dixit, Salil Nair, Jolly Joy, C. U. Vyas, Som Narayan, P. K. Jha, G. K. Solanki, V. M. Pathak
Publikováno v:
The European Physical Journal Applied Physics. 97:8
The high photo responsive property and flexibility of tailoring the optical properties of the semiconducting layered transition metal dichalcogenides are appealing and makes them potentially suitable for the optoelectronic and photo detecting applica
Autor:
Alkesh B. Patel, Vivek M. Pathak, Som Narayan, Gunvant K. Solanki, Vijay Dixit, Kunjal Patel, Prafulla K. Jha, Payal Chauhan
Publikováno v:
Materials Letters: X, Vol 2, Iss, Pp-(2019)
Presently, ternary alloy engineering holds ability in promoting high performance photo detecting devices. In the present investigation, we have employed direct vapor transport technique (DVT) to grow Sb0.5Mo0.5Se2 multilayer crystal for its use as ph
Autor:
C. K. Sumesh, Payal Chauhan, Kunjal Patel, Gunvant K. Solanki, Jolly Joy, Prafulla K. Jha, Som Narayan, Vijay Dixit, Vivek M. Pathak, Salil Nair, C. U. Vyas, Alkesh B. Patel
Publikováno v:
The European Physical Journal B. 92
Tungsten di-selenide (WSe2) belonging to the family of layered transition metal di-chalcogenides (TMDCs) is at present widely used in optoelectronic devices due to their adequate energy band gap suitable for photosensing applications. In the present