Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Vijay Chatterjee"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:2320-2325
In order to enable lateral hole injection, a unique structure with a p-type AlGaN injection channel is proposed to replace the conventional deep-ultraviolet light-emitting diode (DUV LED) structure. This type of modification results in the probabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4adc0b22d76935e8aaaf21db6310e6aa
https://doi.org/10.1109/ted.2021.3064784
https://doi.org/10.1109/ted.2021.3064784
Publikováno v:
IEEE Transactions on Electron Devices. 67:1674-1679
In this article, a novel graded superlattice (SL) p-AlGaN structure for deep ultraviolet light-emitting diode (DUV LED) capable of emitting 273 nm has been studied. It is observed that the output power in the case of graded SL p-AlGaN LED structure (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f47ccf2650a3298e7a0b5ff51829d262
https://doi.org/10.1109/ted.2020.2974408
https://doi.org/10.1109/ted.2020.2974408
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 108:233-237
We have presented improvement in the internal quantum efficiency (IQE) for deep-ultraviolet (DUV) AlGaN-based multi-quantum well (MQW) light-emitting diodes (LEDs) by incorporating step-graded Superlattice (SL) structure in electron-blocking layer (E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e339ee307bb5c0fd096bb0f499853772
https://doi.org/10.1016/j.physe.2018.11.022
https://doi.org/10.1016/j.physe.2018.11.022
Publikováno v:
Optical and Quantum Electronics. 53
Polarization-dependent light extraction efficiency (LEE) of AlGaN based flip-chip deep ultraviolet light emitting diode (peak emission at 280 nm) with embedded periodic photonic structure (PPS), surface PPS and double-sided PPS configuration have bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c821d94c065b94b1d1c5b47bcabf053a
https://doi.org/10.1007/s11082-021-02840-z
https://doi.org/10.1007/s11082-021-02840-z
Publikováno v:
Materials Research Bulletin. 140:111258
The lighting industry undergoes a revolutionizing transformation with the introduction of III-nitride semiconductors, and "LEDs" became a household name. The solid-state light source GaN/InGaN replaced incandescent and compact fluorescent lamps. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::398fa265e784c08cf29497e1b7d78b31
https://doi.org/10.1016/j.materresbull.2021.111258
https://doi.org/10.1016/j.materresbull.2021.111258
Publikováno v:
Superlattices and Microstructures. 112:339-352
The efficiency of any LEDs critically depends on its base structure. In this paper, we have reported the dependence of active layer structure on the performance of AlGaN based deep ultraviolet light emitting diodes (LEDs) having emission wavelength a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b8a22d4e2cd4827f527ce5a57926d68
https://doi.org/10.1016/j.spmi.2017.09.043
https://doi.org/10.1016/j.spmi.2017.09.043
Autor:
Anand Abhishek, Vijay Chatterjee, Ranjan Kumar Maurya, Sunil Rajora, Ajay Agarwal, Rahul Prajesh
Publikováno v:
2019 IEEE 16th India Council International Conference (INDICON).
A microfluidic device capable of sensing even fraction of pico Farad capacitive change is proposed. Purpose of the developed device is fluid concentration identification and characterization on the basis of the dielectric permittivity. A microchannel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae0dbe81451eacfbadcf74bdee6c8d1b
https://doi.org/10.1109/indicon47234.2019.9030297
https://doi.org/10.1109/indicon47234.2019.9030297
Autor:
Volker Buck, Rishi Sharma, Neelima Sharma, Anoop Kumar, N. Woehrl, R. Parmar, P.K. Barhai, Vijay Chatterjee
Publikováno v:
Advanced Materials Letters. 7:903-909
Nanocrystalline diamond (NCD) films are deposited on silicon substrates using Microwave Plasma Enhanced Chemical Vapor Deposition technique with the variation of microwave power from 800 W to 1800 W at 200 mbar for 5 hrs. Methane is used as a precurs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e747de02ac411389fa13fe941d335eee
https://doi.org/10.5185/amlett.2016.6050
https://doi.org/10.5185/amlett.2016.6050
Publikováno v:
Optical Materials. 104:109846
A deep ultraviolet light-emitting diode (DUV LED) consisting of a specifically designed intermediate p-type region involving a superlattice quaternary nitride alloy has been proposed. The light output power of the proposed structure has been found si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30e35c51e0fef9ceef9256063b4866de
https://doi.org/10.1016/j.optmat.2020.109846
https://doi.org/10.1016/j.optmat.2020.109846
Publikováno v:
Semiconductor Science and Technology. 35:055031
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c7fc8fc1f21b0482f356726bc01fc9
https://doi.org/10.1088/1361-6641/ab7ce6
https://doi.org/10.1088/1361-6641/ab7ce6