Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Viet Huong Nguyen"'
Autor:
Abdullah H. Alshehri, Hatameh Asgarimoghaddam, Louis‐Vincent Delumeau, Viet Huong Nguyen, AlRasheed Ali, Mutabe Aljaghtham, Ali Alamry, Dogu Ozyigit, Mustafa Yavuz, Kevin P. Musselman
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract Metal‐insulator‐insulator‐metal (MIIM) diodes with thickness‐gradient films for the insulator layers are fabricated for the first time. Spatially varying atmospheric‐pressure chemical vapor deposition is used to deposit ZnO and Al2
Externí odkaz:
https://doaj.org/article/0f05ff286ab5423f89ddb193121e711f
Autor:
Abderrahime Sekkat, Maciej Oskar Liedke, Viet Huong Nguyen, Maik Butterling, Federico Baiutti, Juan de Dios Sirvent Veru, Matthieu Weber, Laetitia Rapenne, Daniel Bellet, Guy Chichignoud, Anne Kaminski-Cachopo, Eric Hirschmann, Andreas Wagner, David Muñoz-Rojas
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-11 (2022)
Cu2O offers a lot of potential for several optoelectronic applications. Here, the authors present a low temperature, fast and scalable approach to deposit Cu2O films with low resistivity, which is correlated to the defect landscape in the material.
Externí odkaz:
https://doaj.org/article/6e66e739a47b49fab24a4a67f8d29fce
Autor:
Abderrahime Sekkat, Viet Huong Nguyen, César Arturo Masse de La Huerta, Laetitia Rapenne, Daniel Bellet, Anne Kaminski-Cachopo, Guy Chichignoud, David Muñoz-Rojas
Publikováno v:
Communications Materials, Vol 2, Iss 1, Pp 1-10 (2021)
Semiconducting Cu2O is attractive for photovoltaic and optoelectronic devices, though balancing high hole mobility with low-cost fabrication is challenging. Here, Cu2O thin films with high hole mobility of 92 cm²V−1s−1 are deposited in air, and
Externí odkaz:
https://doaj.org/article/e9593043713f47d98ef3300a3162f820
Publikováno v:
E3S Web of Conferences, Vol 263, p 05004 (2021)
PPP investments have been in practice in Vietnam for more than 20 years, yet, many shortcomings and constraints have been revealed. This paper analyzes applicable legal regulations on Public-private partnership contracts of investment in Vietnam, and
Externí odkaz:
https://doaj.org/article/148f9c58bad844c4938398fc833ec11c
Autor:
Thanh-Lieu Thi Le, Lam Tan Nguyen, Hoai-Hue Nguyen, Nguyen Van Nghia, Nguyen Minh Vuong, Hoang Nhat Hieu, Nguyen Van Thang, Viet Thong Le, Viet Huong Nguyen, Pin-Cheng Lin, Anupam Yadav, Ivan Madarevic, Ewald Janssens, Hao Van Bui, Loan Le Thi Ngoc
Publikováno v:
Nanomaterials, Vol 11, Iss 1, p 76 (2020)
Nanostructures of titanium nitride (TiN) have recently been considered as a new class of plasmonic materials that have been utilized in many solar energy applications. This work presents the synthesis of a novel nanostructure of TiN that has a nanodo
Externí odkaz:
https://doaj.org/article/2e86aaf3d8034587bccc624e60f825a2
Autor:
Kim-Hue T. Dinh, Huong T. Thuy Ta, Ngoc Linh Nguyen, Viet Thong Le, Viet Huong Nguyen, Hao Van Bui
Publikováno v:
Chemistry of Materials. 35:2248-2280
Autor:
Lorenzo Bottiglieri, Abderrahime Sekkat, Mouncif Belmouhoub, João Resende, Viet Huong Nguyen, Matthieu Weber, David Munoz Rojas, Carmen Jiménez, Jean-Luc Deschanvres
Publikováno v:
ACS Applied Electronic Materials. 4:5847-5858
Autor:
Viet Huong Nguyen, Masoud Akbari, Abderrahime Sekkat, Huong T. T. Ta, Joao Resende, Carmen Jiménez, Kevin P. Musselman, David Muñoz-Rojas
Publikováno v:
Dalton Transactions. 51:9278-9290
Our work presents a new process for the spatial atomic layer deposition (SALD) of SnO2 thin films from tin(ii) acetylacetonate and water, supported by a DFT study of different Sn metalorganic precursors.
Autor:
Abderrahime Sekkat, César Masse de la Huerta, Guy Chichignoud, Daniel Bellet, Anne Kaminski-Cachopo, Laetitia Rapenne, David Muñoz-Rojas, Viet Huong Nguyen
Publikováno v:
Communications Materials
Communications Materials, Nature, 2021, 2 (1), ⟨10.1038/s43246-021-00181-8⟩
Communications Materials, Vol 2, Iss 1, Pp 1-10 (2021)
Communications Materials, Nature, 2021, 2 (1), ⟨10.1038/s43246-021-00181-8⟩
Communications Materials, Vol 2, Iss 1, Pp 1-10 (2021)
Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e324b8a8bf6082a2e13e909fcbdb4d0a
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