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Autor:
Dou Xinyuan, Gu Sipeng, Bingwu Liu, Yanzhen Wang, Mitsuhiro Togo, Weihua Tong, Jae Gon Lee, Dongil Choi, Dibao Zhou, Jorge Argandona, Vidmantas Sargunas, Yong Yoong Hooi, Shashidhar Shintri, Hsien-Ching Lo
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 31:371-375
In this paper, CMOS wafer level ring oscillator frequency variability improvement >40% is demonstrated by either spatial source/drain activation or ion implantation super scan in FinFET technology. Yield improvement (up to 17%) is verified with bette
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0589aeb15fe975937227d109487c3cfa
https://doi.org/10.1109/tsm.2018.2847040
https://doi.org/10.1109/tsm.2018.2847040
