Zobrazeno 1 - 10 of 11 pro vyhledávání: '"Vidar Tonaas Fauske"'
1
In situelectronic probing of semiconducting nanowires in an electron microscope
Autor: D L Dheeraj, A. M. Munshi, Bjørn-Ove Fimland, M.B. Erlbeck, Helge Weman, A. T. J. van Helvoort, Junghwan Huh, Vidar Tonaas Fauske, Dong Chul Kim
Publikováno v: Journal of Microscopy. 262:183-188
For the development of electronic nanoscale structures, feedback on its electronic properties is crucial, but challenging. Here, we present a comparison of various in situ methods for electronically probing single, p-doped GaAs nanowires inside a sca
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a2694de5fababfd9c68a2762eea0cea9
https://doi.org/10.1111/jmi.12328
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3
Rapid estimation of catalyst nanoparticle morphology and atomic-coordination by high-resolution Z-contrast electron microscopy
Autor: Vidar Tonaas Fauske, Peter D. Nellist, Lewys Jones, Katherine E. MacArthur, Antonius T. J. van Helvoort
Heterogeneous nanoparticle catalyst development relies on an understanding of their structure-property relationships, ideally at atomic resolution and in three-dimensions. Current transmission electron microscopy techniques such as discrete tomograph
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e69903825f286c1144cf57ac940e73c
https://ora.ox.ac.uk/objects/uuid:bf67c88a-89f8-4815-87aa-5e68ac935401
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4
Quantifying a heterogeneous Ru catalyst on carbon black using ADF STEM
Autor: Peter D. Nellist, Lewys Jones, Dogan Ozkaya, Vidar Tonaas Fauske, Aakash Varambhia, Sandra Van Aert, Annick De Backer
Publikováno v: Particle and particle systems characterization
Ru catalysts are part of a set of late transition metal nanocatalysts that have garnered much interest for catalytic applications such as ammonia synthesis and fuel cell production. Their performance varies greatly depending on their morphology and s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04e57c4effd9e976878d88e0cf55fb7b
https://doi.org/10.1002/ppsc.201600067
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5
Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer
Autor: Silke Christiansen, George Sarau, Jianfeng Yang, Manuela Göbelt, Björn Hoffmann, Helge Weman, Martin Heilmann, Michael Latzel, Gavin Conibeer, Antonius T. J. van Helvoort, A. Mazid Munshi, Vidar Tonaas Fauske, C. Tessarek
Publikováno v: Nano letters. 16(6)
The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::627b9cb29127c539cb04ef4c3b1c5790
https://pubmed.ncbi.nlm.nih.gov/27124605
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6
In Situ Heat-Induced Replacement of GaAs Nanowires by Au
Autor: Bjørn-Ove Fimland, A. Mazid Munshi, Giorgio Divitini, Caterina Ducati, Antonius T. J. van Helvoort, Vidar Tonaas Fauske, Helge Weman, Junghwan Huh, D L Dheeraj
Publikováno v: Nano letters. 16(5)
Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacement of semiconductor nanowires by metals is envisioned as a method to achieve well-defined junctions within nanowires. To better understand the mechan
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38d7263ed4a855fd11c18c3713604926
https://pubmed.ncbi.nlm.nih.gov/27104293
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7
Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography
Autor: Dong Chul Kim, A. M. Munshi, Lyubomir Ahtapodov, Vidar Tonaas Fauske, Bjørn-Ove Fimland, A. T. J. van Helvoort, Ki-Dong Lee, Junghwan Huh, D L Dheeraj, B. Heidari, Helge Weman, J F Reinertsen
Publikováno v: Nano letters. 14(2)
We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are defined in a SiO2 mask on 2 in. Si wafers using nanoimprint lithography (NIL
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f635b6c3fed2fdcd73465f3dd675cd1
https://pubmed.ncbi.nlm.nih.gov/24467394
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8
Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth
Autor: Bjørn-Ove Fimland, A. Mazid Munshi, Antonius T. J. van Helvoort, Helge Weman, Dong Chul Kim, Vidar Tonaas Fauske, D L Dheeraj
Publikováno v: Nano letters. 12(9)
By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations app
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9868c21312750bff4007ba32de48a61
https://pubmed.ncbi.nlm.nih.gov/22889019
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10
Radial composition variations in the shells of GaAs/AlGaAs core-shell nanowires
Autor: J F Reinertsen, Bjørn-Ove Fimland, Aleksander B. Mosberg, Julie S. Nilsen, Helge Weman, D L Dheeraj, A. M. Munshi, A. T. J. van Helvoort, Vidar Tonaas Fauske
Publikováno v: Journal of Physics: Conference Series. 644:012007
GaAs nanowires (NWs) are seen as promising building blocks for future optoelectronic devices. To ensure reproducible properties, a high NW uniformity is required. Here, a substantial number of both position-controlled and randomly grown self-catalyze
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f5b9154aaac2719c9dea0c86ac9da509
https://doi.org/10.1088/1742-6596/644/1/012007
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