Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Victoria M. Ichizli"'
Autor:
Hans L. Hartnagel, D. Kraft, Ralf Hunger, Wolfram Jaegermann, David Ensling, Victoria M. Ichizli, T. Mayer, M. Rodriguez-Girones
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 200:432-438
Preparation steps of Pt/n-GaAs Schottky contacts as applied in the fabrication process of varactor diode arrays for THz applications are analysed by photoelectron spectroscopy. Pulsed cathodic deposition of Pt onto GaAs (1 0 0) wafer surfaces from ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14214ce4ef1a49ecfcf15e975dbd072
https://doi.org/10.1016/s0168-583x(02)01735-4
https://doi.org/10.1016/s0168-583x(02)01735-4
Autor:
B. Mottet, Hans L. Hartnagel, Oleg Cojocari, L. Marchand, C. Garden, M. Rodriguez-Girones, Victoria M. Ichizli
Publikováno v:
Microelectronics Reliability. 42:1593-1596
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97025666e53aa8984d7dd8c72f2c368c
https://doi.org/10.1016/s0026-2714(02)00196-8
https://doi.org/10.1016/s0026-2714(02)00196-8
Publikováno v:
Applied Surface Science. 190:428-436
Basic THz elements are produced by standard semiconductor science and technology. Therefore, three main material systems are used. These are first of all semiconductors, for active and passive layer formation; metals, for interconnect and contact for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::160fcc58c7c9ca799b5b8dd36c00ed25
https://doi.org/10.1016/s0169-4332(01)00914-x
https://doi.org/10.1016/s0169-4332(01)00914-x
Publikováno v:
Materials Science Forum. :173-180
With growing interest in applications in the THz regime, techniques related to THz-devices and circuits become increasingly important. In the frequency range of the so-called submillimeter waves, device dimensions are comparable to the wavelength. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed1f0306e76ed54a735612b66c1ca1b
https://doi.org/10.4028/www.scientific.net/msf.384-385.173
https://doi.org/10.4028/www.scientific.net/msf.384-385.173
Publikováno v:
Semiconductor Science and Technology. 14:143-147
MBE grown InAs/AlSb heterostructures with AlAs- and InSb-type interfaces were investigated by tunnelling spectroscopy using a scanning tunnelling microscope (STM). STM surface topography revealed a different electronic surface morphology of the thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a458e82b9e4c8c407296efbc8877116
https://doi.org/10.1088/0268-1242/14/2/007
https://doi.org/10.1088/0268-1242/14/2/007
Publikováno v:
Applied Physics Letters. 79:4016-4018
Morphology of n-type porous GaP samples with (100) crystal orientation was modified by postchemical etching for field-emitter application. The structures produced have uniform size and shape distribution and are found to show good emission characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc0156fdcbef39bb393b7ec6986d734c
https://doi.org/10.1063/1.1425456
https://doi.org/10.1063/1.1425456
Publikováno v:
Atomic Force Microscopy/Scanning Tunneling Microscopy 3 ISBN: 0306462974
We consider scanning tunneling microscopy (STM) probe on porous GaP. Among STM effects causing image distortions, we distinguish tip effects and analyze tip shape effect, lateral effect and tip bending. We estimate maximum errors induced by these eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3c5aa4a2427c57f94de11b56cfa31d2
https://doi.org/10.1007/0-306-47095-0_14
https://doi.org/10.1007/0-306-47095-0_14
Publikováno v:
Applied Physics Letters. 67:3316-3318
Porous GaP layers prepared by electrochemical anodization of (100)‐oriented bulk material was found to exhibit blue and ultraviolet photoluminescence when excited by a KrF excimer laser. The energy position of the UV luminescence band (3.3 eV at 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dfad88f0d17dfc4f1583bad8844c644
https://doi.org/10.1063/1.115232
https://doi.org/10.1063/1.115232
Autor:
Maosheng Hao, I. M. Tiginyanu, Victoria M. Ichizli, E. K. Sia, Sukant K. Tripathy, Ji Zhang, Hans L. Hartnagel, Kabula Mutamba, Soo Jin Chua
Publikováno v:
SPIE Proceedings.
Continuous GaN films were grown on the top of cracked Si- doped n + -GaN epilayers by MOCVD techniques. Raman- scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using x-ray diffraction a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df12d84017de4ac57a274b96576b7bfe
https://doi.org/10.1117/12.446586
https://doi.org/10.1117/12.446586