Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Victoria L. Graffenberg"'
Autor:
Georgia K. Rich, Jeff Meute, Shashikant Patel, Victoria L. Graffenberg, Karen L. Turnquest, Michael P. Rodriguez, Kim Dean
Publikováno v:
SPIE Proceedings.
International SEMATECH(ISMT) has operated a 157nm Resist Test center since June of 2000. During this time, we have processed hundreds of 157nm photoresist samples from major resist suppliers and research organizations. Almost all of these of these ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72e2663dc5240089ec6adeee3476aaec
https://doi.org/10.1117/12.537652
https://doi.org/10.1117/12.537652
Autor:
Will Conley, Kim Dean, Shashikant Patel, Bruce W. Smith, Paul G. Dewa, Jeff Meute, James E. Webb, Victoria L. Graffenberg, Cesar M. Garza, Arnie Ford, Susan S. MacDonald, Marco Hugo Petrus Moers, Daniel Miller, Greg P. Hughes, Azeddine Zerrade, Kevin Cummings, Georgia K. Rich, James Foster, Peter Dirksen
Publikováno v:
SPIE Proceedings.
Aberrations, aberrations, here there everywhere but how do we collect useful data that can be incorporated into our simulators? Over the past year there have no less than 18 papers published in the literature discussing how to measure aberrations to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7ce96e3b070a75ac6c8727e9fb11f96
https://doi.org/10.1117/12.474551
https://doi.org/10.1117/12.474551
Autor:
Paul F. Nealey, Shashikant Patel, Georgia K. Rich, Victoria L. Graffenberg, Wolf-Dieter Domke, Heidi B. Cao
Publikováno v:
Advances in Resist Technology and Processing XVII.
The pattern collapse behavior of a set of 193 nm resists in high aspect ratios was quantified. For all the resists investigated a general behavior could be observed: the collapse did not only depend on aspect ratio but also on pitch. With higher aspe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0bcfc4b56d42eaf0e3da58b91712a28
https://doi.org/10.1117/12.388293
https://doi.org/10.1117/12.388293
Publikováno v:
Advances in Resist Technology and Processing XVII.
Thin Layer Imaging (TLI) technique offers opportunity for lithographic performance gain as well as issues relating to its complexity of the process. Of those improvement possibilities, utilizing hyper fine resolution one can gain using very thin (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf7a2eccaf5cc00f8e690616f28fd001
https://doi.org/10.1117/12.388267
https://doi.org/10.1117/12.388267
Autor:
Shashikant Patel, Wolf-Dieter Domke, Jeff D. Byers, Victoria L. Graffenberg, Gilles R. Amblard, Georgia K. Rich, Gabriel B. Perez, Daniel Miller
Publikováno v:
Advances in Resist Technology and Processing XVII.
193 nm photoresists on the market today can be classified into three different chemical platforms. The first platform involves acrylate type polymers, the second one cycloolefin- maleic anhydride (COMA) type polymers, and the third one a mixture of b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e1a38b5a532ee764903dd8438bcd86
https://doi.org/10.1117/12.388323
https://doi.org/10.1117/12.388323
Autor:
Kim Dean, Victoria L. Graffenberg, David R. Stark, Georgia K. Rich, Andrew J. Blakeney, Thomas Steinhaeusler, Allen H. Gabor, Daniela White, Daniel Miller
Publikováno v:
SPIE Proceedings.
The 193 nm photoresist generation will need several technological approaches in order for it to be successfully integrated into manufacturing. These approaches include bilayer, single layer and top surface imaging resists. Bilayer resists offer the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f431683ee39f6ae35824a2f8d79554c0
https://doi.org/10.1117/12.312373
https://doi.org/10.1117/12.312373
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