Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Victoria J. Bruce"'
Publikováno v:
EDFA Technical Articles. 5:13-24
This article provides a high-level review of the tools and techniques used for backside analysis. It discusses the use of laser scanning and conventional microscopy, liquid and solid immersion lenses, photon emission microscopy (PEM), and laser-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7627f35f65e6ced970d2c78ce3ba0aff
https://doi.org/10.31399/asm.edfa.2003-4.p013
https://doi.org/10.31399/asm.edfa.2003-4.p013
Autor:
Michael R. Bruce, Victoria J. Bruce
Publikováno v:
EDFA Technical Articles. 5:13-20
Photon emission microscopy (PEM) has proven to be a powerful tool for fault isolation and has adapted well to ongoing changes in technology and emerging needs. In this tutorial, the authors describe the fundamentals of photon emission, the essential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711db40da1fd3ad839f313c08c3c6b30
https://doi.org/10.31399/asm.edfa.2003-3.p013
https://doi.org/10.31399/asm.edfa.2003-3.p013
Autor:
Edward I. Cole, Paiboon Tangyunyong, Charles F. Hawkins, Michael R. Bruce, Victoria J. Bruce, Rosalinda M. Ring, Wan-Loong Chong
Publikováno v:
EDFA Technical Articles. 4:11-16
Resistive interconnections, a type of soft failure, are extremely difficult to find using existing backside methods, and with flip-chip packages, alternative front side approaches are of little or no help. In an effort to address this challenge, a te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb9fe2b4b0a89afa7a1933a0ec36d905
https://doi.org/10.31399/asm.edfa.2002-4.p011
https://doi.org/10.31399/asm.edfa.2002-4.p011
Autor:
David H. Eppes, Jacob Wilcox, Mike Bruce, R.M. Ring, Paiboon Tangyunyong, Victoria J. Bruce, Edward I. Cole, C.F. Hawkins
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
Soft defects in integrated circuits (ICs) are defined as failures when the IC is partially functional, but will not operate properly under all specified conditions - these conditions may be within or outside normal limits. To address soft defects, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2d2d979cb6180a2035117421e53e2d0
https://doi.org/10.1109/leos.2003.1252974
https://doi.org/10.1109/leos.2003.1252974
Autor:
Victoria J. Bruce, W.-L. Chong, D.A. Benson, Daniel L. Barton, C.F. Hawkins, David H. Eppes, C.L. Henderson, Jacob Wilcox, Mike Bruce, R.M. Ring, J.M. Soden, Paiboon Tangyunyong, Edward I. Cole
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
Defect localization in modern ICs can be extremely challenging. To address this complexity several optically based methodologies have been developed over the past decade. These techniques will be described demonstrating their utility in locating defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85c114fe32cc390787ba165674fa49da
https://doi.org/10.1109/leos.2003.1252911
https://doi.org/10.1109/leos.2003.1252911
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper is about a sample preparation technique that is based on a previous research publication1. The technique was initially used for the investigation of salicide formation for CMOS process development. The initial results were very good and pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33bc90619e265a7bff5978c91b3d7282
https://doi.org/10.31399/asm.cp.istfa2002p0317
https://doi.org/10.31399/asm.cp.istfa2002p0317
Autor:
Charles F. Hawkins, David H. Eppes, Michael R. Bruce, Victoria J. Bruce, Jacob Wilcox, Edward I. Cole, Paiboon Tangyunyong
Publikováno v:
International Symposium for Testing and Failure Analysis.
We have developed a new scanning laser microscopy methodology, Soft Defect Localization (SDL), that directly locates soft defects from the front side and backside of an IC. The method combines localized laser heating with the pass/fail state of a dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1018471257ee869427796440696e4e57
https://doi.org/10.31399/asm.cp.istfa2002p0021
https://doi.org/10.31399/asm.cp.istfa2002p0021
Autor:
Victoria J. Bruce, R.M. Ring, Charles F. Hawkins, Michael R. Bruce, Paiboon Tangyunyong, Edward I. Cole, Wan-Loong Chong
Publikováno v:
ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis.
Resistive Interconnection Localization (RIL) is a new scanning laser microscope analysis technique that directly and rapidly localizes defective IC vias, contacts, and conductors from the front side and backside. RIL uses a scanned laser to produce l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b088aa99bb7594bb7eee4cf097509d5c
https://doi.org/10.31399/asm.cp.istfa2001p0043
https://doi.org/10.31399/asm.cp.istfa2001p0043
Autor:
Mike Bruce, Charles Bachand, Victoria J. Bruce, Jeffrey A. Block, Shawn McBride, Greg Dabney, Steven Kasapi, Jason Mulig
Publikováno v:
International Symposium for Testing and Failure Analysis.
A new tool (Schlumberger IDS 2000) has become available for acquiring waveforms from C4 (also known as flip chip) packaged IC’s. The waveform acquisition technique is based on electro-optic sampling through the backside of silicon. After explaining
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4d1adc4aba22ff681610a19ab3ef5c
https://doi.org/10.31399/asm.cp.istfa1999p0019
https://doi.org/10.31399/asm.cp.istfa1999p0019