Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Victoria C. Sorg"'
Publikováno v:
ECS Transactions. 66:117-124
Dopant activation of Si implanted In0.53Ga0.47As (InGaAs) following laser spike annealing (LSA) was studied at temperatures up to 1000oC with dwells from 250 μs to 2000 μs. Temperatures of the InGaAs under LSA were directly measured using Pt thermi
Autor:
Alan G. Jacobs, Megan O. Hill, Victoria C. Sorg, Michael Thompson, Benjamin E. Treml, Byungki Jung, Robert T. Bell
Publikováno v:
ACS combinatorial science. 18(9)
A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is pr
Autor:
V. Q. Truong, Thomas P. Martin, A. G. Lind, E. L. Kennon, Kevin S. Jones, Victoria C. Sorg, Henry Aldridge, Michael Thompson, C. Hatem
Publikováno v:
Journal of Applied Physics. 119:095705
Studies of implant activation in InAs have not been reported presumably because of challenges associated with junction leakage. The activation of 20 keV, Si+ implants into lightly doped (001) p-type bulk InAs performed at 100 °C as a function of ann