Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Victor V. Sherstnev"'
Publikováno v:
Journal of Applied Spectroscopy. 78:733-737
We have used numerical modeling to study the effect of diffusion and fluctuations in the nonequilibrium carrier density in the active layer of injection lasers based on an InAsSb/InAsSbP heterostructure on the angular distribution of the output inten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b961b64363c381d45a4d54cd7dde3cf0
https://doi.org/10.1007/s10812-011-9525-7
https://doi.org/10.1007/s10812-011-9525-7
Autor:
I. A. Andreev, Victor V. Sherstnev, O. Gurler, Maya P. Mikhailova, E.V. Kunitsyna, T.V. L'vova, G. Kaynak, Yu. P. Yakovlev, M. Ahmetoglu
Publikováno v:
Optical Materials. 32:1573-1577
Bu çalışma, 4-8 Şubat 2010 tarihlerinde İstanbul[Türkiye]'da düzenlenen 2. World Conference on Educational Sciences (WCES-2010)'da bildiri olarak sunulmuştur. The paper describes liquid phase epitaxial growth and characterization of the GaSb-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b184b0bea566f5cf7a552086052ac629
https://doi.org/10.1016/j.optmat.2010.06.010
https://doi.org/10.1016/j.optmat.2010.06.010
Publikováno v:
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy. 66:824-831
InAsSb/InAsSbP double heterostructure diode lasers for the spectral range of 3–4 μm grown by liquid phase epitaxy have been investigated. The laser tuning was studied as a function of the stripe width. The temperature and current tuning of such la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d034798d55b63d00de53e11d13edc5
https://doi.org/10.1016/j.saa.2006.10.052
https://doi.org/10.1016/j.saa.2006.10.052
Autor:
E. A. Grebenshikova, A. Yu. Kislyakova, Victor V. Sherstnev, A. M. Monakhov, N. S. Averkiev, Anthony Krier, D.A. Wright, Yu. P. Yakovlev
Publikováno v:
Low Temperature Physics. 33:283-290
The physical working principles of whispering gallery mode semiconductor disk lasers are examined. A new method is proposed for measuring the single-pass gain. The theory of cylindrical waveguides is considered. The spectral characteristics of whispe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ea9668f27c9518ea6f4e4a90eeea656
https://doi.org/10.1063/1.2719969
https://doi.org/10.1063/1.2719969
Autor:
Anthony Krier, Victor V. Sherstnev
Publikováno v:
Journal of Physics D: Applied Physics. 36:1484-1488
Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b262791057500ea4b13bcabb1ef27db
https://doi.org/10.1088/0022-3727/36/13/309
https://doi.org/10.1088/0022-3727/36/13/309
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences. 359:523-531
InAsSb/InAsSbP double heterostructure diode lasers for the spectral range of 3.3 μm grown by liquid phase epitaxy have been investigated. Emission spectra, far–field patterns and wavelength tuning versus current have been studied in the wide curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09aa9c000821c1c08323e1488ee511d2
https://doi.org/10.1098/rsta.2000.0740
https://doi.org/10.1098/rsta.2000.0740
Publikováno v:
Journal of Physics D: Applied Physics. 32:3117-3121
We report on a powerful 4.6 ?m light emitting diode (LED), operating at room temperature, suitable for carbon monoxide gas detection. The source is based on a InAs0.55Sb0.15P0.30 /InAs0.89Sb0.11/InAs0.55Sb0.15P0.30 symmetrical double heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c139fee777389bee5a5e017433dc6a
https://doi.org/10.1088/0022-3727/32/24/304
https://doi.org/10.1088/0022-3727/32/24/304
Autor:
N. M. Kolchanova, T. N. Danilova, Victor V. Sherstnev, M. V. Stepanov, A. P. Danilova, A. N. Imenkov, Yu. P. Yakovlev
Publikováno v:
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy. 55:2077-2082
InAsSb/InAsSbP double heterostructure diode lasers for the spectral range of 3.3 μm grown by liquid phase epitaxy have been investigated. Emission spectra, far-field patterns and wavelength tuning versus current have been studied in the wide current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8deaa1aded74d6fdecaf00134cfa7fee
https://doi.org/10.1016/s1386-1425(99)00079-7
https://doi.org/10.1016/s1386-1425(99)00079-7
Publikováno v:
Journal of Physics D: Applied Physics. 32:1768-1772
This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 µm. The InAs0.89Sb0.11 ternary material us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320b7e8da38591470c2f4d7a1ad0d64f
https://doi.org/10.1088/0022-3727/32/15/302
https://doi.org/10.1088/0022-3727/32/15/302
Autor:
Victor V. Sherstnev, N. M. Kolchanova, M. V. Stepanov, T. N. Danilova, A. N. Imenkov, A. P. Danilova, Yu. P. Yakovlev
Publikováno v:
IEE Proceedings - Optoelectronics. 145:261-264
InAsSb-InAsSbP double heterostructures diode lasers for the spectral region 3.3 /spl mu/m grown by liquid phase epitaxy have been investigated. Emission spectra, far-field patterns and wavelength tuning have been studied over a wide current range fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e67069a5206956d61045629a81ef09d
https://doi.org/10.1049/ip-opt:19982306
https://doi.org/10.1049/ip-opt:19982306