Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Victor Sutcliffe"'
Autor:
Karen Maex, F. Ungar, J. Michelon, Victor Sutcliffe, A.H. Fischer, C. Bruynseraede, J. Schumacher
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
Am important improvement in electromigration (EM) resistance was revealed upon the introduction of atomic-layer-deposited WCN barriers in dual-damascene Cu interconnects. At stress level EM failure were found to increase with WCN thickness and to be
Autor:
R. Jonckheere, S. Peeters, Youssef Travaly, Francesca Iacopi, Karen Maex, Herbert Struyf, L.H.A. Leunissen, Zs. Tokei, Victor Sutcliffe, O. Richard, M. Van Hove, Michele Stucchi
Publikováno v:
Scopus-Elsevier
The damage induced in the low-k material upon exposure to dry etch and ash plasmas is a point of major concern in terms of preservation of the dielectric properties. There is urgent need to assess, classify and quantify the extent of such damage to a
Autor:
Jorg Schuhmacher, W Besling, Dirk J. Gravesteijn, Alessandra Satta, Gerald Beyer, Ana Martin Hoyas, Karen Maex, Thomas Abell, Victor Sutcliffe
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
Ternary tungsten carbo nitride WCN films and titanium nitride TiN films were deposited with atomic layer deposition as diffusion barrier materials for copper metallisation. The growth behaviour on different substrates and surface closure was studied
Autor:
Karen Maex, Ana Martin Hoyas, Alain M. Jonas, M. A. Van Hove, Youssef Travaly, Thomas Abell, Jorg Schuhmacher, Victor Sutcliffe
Publikováno v:
Journal of Applied Physics. 97:084316
On nanoscale laminate structures, the interface cannot be identified any longer as the separation between two films of bulk materials. The formation of the interface defines the final composition and structure of the laminate structure. As such, the
Autor:
Didem Ernur, Karen Maex, Victor Sutcliffe, Valentina Terzieva, Jorg Schuhmacher, Caroline Whelan
Publikováno v:
Journal of The Electrochemical Society. 152:B512
We investigated the mechanism of chemical and galvanic corrosion of tungsten nitride carbide (WN X C Y ) barrier during Cu chemical mechanical planarization (CMP). Our results demonstrate that chemical corrosion is caused by the oxidation of tungsten
Autor:
Romano Hoofman, Steven Demuynck, Victor Sutcliffe, Philippe Roussel, Zsolt Tokei, Karen Maex, G. Beyer, Francesca Iacopi
Publikováno v:
Scopus-Elsevier
The purpose is to show that TDDB reliability of damascene structures has to be assessed as a system composed of a dielectric, copper diffusion barrier and copper. This becomes mandatory when porous low-k materials are considered, since barrier integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cf4baf974d59e7fb59e685fe8f44ecf
http://www.scopus.com/inward/record.url?eid=2-s2.0-3042522553&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-3042522553&partnerID=MN8TOARS