Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Victor Suman"'
Publikováno v:
Moldavian Journal of the Physical Sciences, Vol 20, Iss 1, Pp 66-72 (2021)
In this paper, a p–n thin film NiO/ZnO heterojunction for a rectifier diode and a UV photodetector is prepared and characterized. Nickel oxide (NiO) and gallium-doped zinc oxide (ZnO:Ga) thin films are grown by RF magnetron sputtering and spray pyr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a18a074cae7f5d7c28042fa02f04e3d
https://doi.org/10.53081/mjps.2021.20-1.05
https://doi.org/10.53081/mjps.2021.20-1.05
Autor:
Mircea Dragoman, Daniela Dragoman, Adrian Dinescu, Andrei Avram, Silviu Vulpe, Martino Aldrigo, Tudor Braniste, Victor Suman, Emil Rusu, Ion Tiginyanu
Publikováno v:
Nanotechnology. 34:175203
In this paper, we show in a series of experiments on 10 nm thick SnS thin film-based back-gate transistors that in the absence of the gate voltage, the drain current versus drain voltage (I D–V D) dependence is characterized by a weak drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edfde6f64df216519cfe148a6165c26d
https://doi.org/10.1088/1361-6528/acb69e
https://doi.org/10.1088/1361-6528/acb69e
Autor:
Mircea Dragoman, Adrian Dinescu, Andrei Avram, Daniela Dragoman, Silviu Vulpe, Martino Aldrigo, Tudor Braniste, Victor Suman, Emil Rusu, Ion Tiginyanu
Publikováno v:
Nanotechnology
In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1077d01dc12a5eda9066fffe68d116c5
https://doi.org/10.1088/1361-6528/ac7cf8
https://doi.org/10.1088/1361-6528/ac7cf8
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 2 (102) (2017)
Heterojoncțiunile CdS/Cd1-xMnxTe au fost obținute aplicând metoda de volum cvasiînchis. La studierea proprietăților electrice și fotoelectrice ale acestor structuri s-a constatat că fotosensibilitatea a crescut esențial datorită tratării
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::0e43758759c1337a1ee7f8681d7bf6c6
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/850
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/850
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 2 (82) (2015)
Electrical and photoelectrical properties of CdS/Cd1-xMnxTe heterojunction at different temperatures from 293 K to 393 K were studied. The potential barrier at 293 K makes 0,78 V and is linearly decreasing with temperature increase with a temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::f22dd286419ea680229d2c17966b2587
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/183
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/183
Autor:
Guirao, Victor Suman [UNESP]
Publikováno v:
AlephRepositório Institucional da UNESPUniversidade Estadual PaulistaUNESP.
Made available in DSpace on 2014-06-11T19:27:14Z (GMT). No. of bitstreams: 0 Previous issue date: 2012-08-14Bitstream added on 2014-06-13T18:55:42Z : No. of bitstreams: 1 guirao_vs_me_ilha.pdf: 3586237 bytes, checksum: 945e594528c1e4e71d8ddb43d3bc100
Externí odkaz:
http://hdl.handle.net/11449/94526
Autor:
Mircea Dragoman, Martino Aldrigo, Adrian Dinescu, Sergiu Iordanescu, Cosmin Romanitan, Silviu Vulpe, Daniela Dragoman, Tudor Braniste, Victor Suman, Emil Rusu, Ion Tiginyanu
Publikováno v:
Nanotechnology
In this paper we present the microwave properties of tin sulfide (SnS) thin films with the thickness of just 10 nm, grown by RF magnetron sputtering techniques on a 4 inch silicon dioxide/high-resistivity silicon wafer. In this respect, interdigitate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a448630559f5bb1e06aceba1014e3bb4