Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Victor Suman"'
Publikováno v:
Moldavian Journal of the Physical Sciences, Vol 20, Iss 1, Pp 66-72 (2021)
In this paper, a p–n thin film NiO/ZnO heterojunction for a rectifier diode and a UV photodetector is prepared and characterized. Nickel oxide (NiO) and gallium-doped zinc oxide (ZnO:Ga) thin films are grown by RF magnetron sputtering and spray pyr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a18a074cae7f5d7c28042fa02f04e3d
https://doi.org/10.53081/mjps.2021.20-1.05
https://doi.org/10.53081/mjps.2021.20-1.05
Autor:
Mircea Dragoman, Daniela Dragoman, Adrian Dinescu, Andrei Avram, Silviu Vulpe, Martino Aldrigo, Tudor Braniste, Victor Suman, Emil Rusu, Ion Tiginyanu
Publikováno v:
Nanotechnology. 34:175203
In this paper, we show in a series of experiments on 10 nm thick SnS thin film-based back-gate transistors that in the absence of the gate voltage, the drain current versus drain voltage (I D–V D) dependence is characterized by a weak drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edfde6f64df216519cfe148a6165c26d
https://doi.org/10.1088/1361-6528/acb69e
https://doi.org/10.1088/1361-6528/acb69e
Autor:
Mircea Dragoman, Adrian Dinescu, Andrei Avram, Daniela Dragoman, Silviu Vulpe, Martino Aldrigo, Tudor Braniste, Victor Suman, Emil Rusu, Ion Tiginyanu
Publikováno v:
Nanotechnology
In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1077d01dc12a5eda9066fffe68d116c5
https://doi.org/10.1088/1361-6528/ac7cf8
https://doi.org/10.1088/1361-6528/ac7cf8
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 2 (102) (2017)
Heterojoncțiunile CdS/Cd1-xMnxTe au fost obținute aplicând metoda de volum cvasiînchis. La studierea proprietăților electrice și fotoelectrice ale acestor structuri s-a constatat că fotosensibilitatea a crescut esențial datorită tratării
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::0e43758759c1337a1ee7f8681d7bf6c6
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/850
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/850
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 2 (82) (2015)
Electrical and photoelectrical properties of CdS/Cd1-xMnxTe heterojunction at different temperatures from 293 K to 393 K were studied. The potential barrier at 293 K makes 0,78 V and is linearly decreasing with temperature increase with a temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::f22dd286419ea680229d2c17966b2587
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/183
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/183
Autor:
Guirao, Victor Suman [UNESP]
Publikováno v:
AlephRepositório Institucional da UNESPUniversidade Estadual PaulistaUNESP.
Made available in DSpace on 2014-06-11T19:27:14Z (GMT). No. of bitstreams: 0 Previous issue date: 2012-08-14Bitstream added on 2014-06-13T18:55:42Z : No. of bitstreams: 1 guirao_vs_me_ilha.pdf: 3586237 bytes, checksum: 945e594528c1e4e71d8ddb43d3bc100
Externí odkaz:
http://hdl.handle.net/11449/94526
Autor:
Mircea Dragoman, Martino Aldrigo, Adrian Dinescu, Sergiu Iordanescu, Cosmin Romanitan, Silviu Vulpe, Daniela Dragoman, Tudor Braniste, Victor Suman, Emil Rusu, Ion Tiginyanu
Publikováno v:
Nanotechnology
In this paper we present the microwave properties of tin sulfide (SnS) thin films with the thickness of just 10 nm, grown by RF magnetron sputtering techniques on a 4 inch silicon dioxide/high-resistivity silicon wafer. In this respect, interdigitate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a448630559f5bb1e06aceba1014e3bb4
Ultralow voltage (1 μ V) electrical switching of SnS thin films driven by a vertical electric field.
Autor:
Dragoman, Mircea, Dragoman, Daniela, Dinescu, Adrian, Avram, Andrei, Vulpe, Silviu, Aldrigo, Martino, Braniste, Tudor, Suman, Victor, Rusu, Emil, Tiginyanu, Ion
Publikováno v:
Nanotechnology; 4/23/2023, Vol. 34 Issue 17, p1-8, 8p
This book reports on advances in fundamental and applied research at the interface between nanotechnology and biomedical engineering. Gathering peer-reviewed contributions to the 6th International Conference on Nanotechnologies and Biomedical Enginee
This book reports on advances in fundamental and applied research at the interface between nanotechnology and biomedical engineering. Gathering peer-reviewed contributions to the 6th International Conference on Nanotechnologies and Biomedical Enginee